Application of nanosphere lithography to LED surface texturing and to the fabrication of nanorod LED arrays

IEEE Journal on Selected Topics in Quantum Electronics

Volumn 15, Issue 4, 2009, Pages 1242-1249

  Ke, Min Yung ^a   Wang, Cheng Yin ^a   Chen, Liang Yi ^a   Chen, Hung Hsien ^a   Chiang, Hung Li ^a   Cheng, Yun Wei ^a   Hsieh, Min Yann ^a   Chen, Cheng Pin ^a   Huang, Jianjang ^a  

^a NATIONAL TAIWAN UNIVERSITY   (Taiwan)

Author keywords

LEDs; Nanorods; Nanosphere lithography

Indexed keywords

BRAGG SCATTERING; DEVICE PERFORMANCE; ELECTROLUMINESCENCE SPECTRA; GUIDING EFFECT; INTERNAL QUANTUM EFFICIENCY; LED ARRAYS; LEDS; LIGHT OUTPUT; NANOROD DEVICES; NANOSPHERE LITHOGRAPHY; OPTICAL POWER; P-TYPE CONTACT; PEAK WAVELENGTH; QUANTUM CONFINED STARK EFFECT; QUANTUM WELL; SURFACE-ROUGHENING; SURFACE-TEXTURING; TEXTURED SURFACE;

GALLIUM ALLOYS; GALLIUM NITRIDE; LIGHT; MULTIPHOTON PROCESSES; NANORODS; NANOSPHERES; PHOTONS; SEMICONDUCTING GALLIUM; SEMICONDUCTOR QUANTUM DOTS; SEMICONDUCTOR QUANTUM WELLS; SPECTROSCOPY; TEXTURING;

LITHOGRAPHY;

EID: 70349329552     PISSN: 1077260X     EISSN: None     Source Type: Journal    
DOI: 10.1109/JSTQE.2009.2016433     Document Type: Article

References (19)

1. C. H. Liu, R. W. Chuang, S. J. Chang, Y. K. Su, L. W. Wu, and C. C. Lin, "Improved light output power of InGaN/GaN MQW LEDs by lower temperature p-GaN rough surface," Mater. Sci. Eng. B, vol.112, no.1, pp. 10-13, Sep. 2004.
2. W. Lee, J. Limb, J.-H. Ryou, D. Yoo, T. Chung, and R. D. Dupuis, "In-fluence of growth temperature and growth rate of p-GaN layers on the characteristics of green light emitting diodes," J. Electron. Mater., vol.35, no.4, pp. 587-591, Apr. 2006.
3. C. L. Lin, P. H. Chen, C. H. Chan, C. C. Lee, C. C. Chen, and J. Y. Chang, "Light enhancement by the formation of an Al oxide honeycomb nanos-tructure on the n-GaN surface of thin-GaN light-emitting diodes," Appl. Phys. Lett., vol.90, pp. 242106-1-242106-3, 2007.
4. S. M. Pan, R. C. Tu, Y. M. Fan, R. C. Yeh, and J. T. Hsu, "Enhanced output power of InGaN-GaN light-emitting diodes with high-transparency nickel-oxide-indium-tin-oxide ohmic contacts," IEEE Photon. Technol. Lett., vol.15, no.5, pp. 646-648, May 2003.
5. C. Huh, K. S. Lee, E. J. Kang, and S. J. Park, "Improved light-output and electrical performance of InGaN-based light-emitting diode by micror-oughening of the p-GaN surface," J. Appl. Phys., vol.93, pp. 9383-9385, 2003.
6. S. I. Na, G. Y. Ha, D. S. Han, S. S. Kim, J. Y. Kim, J. H. Lim, D. J. Kim, K. I. Min, and S. J. Park, "Selective wet etching of p-GaN for efficient GaN-based light-emitting diodes," IEEE Photon. Technol. Lett., vol.18, no.14, pp. 1512-1514, Jul. 2006.
7. J. Shakya, K. H. Kim, J. Y. Lin, and H. X. Jiang, "Enhanced light extraction in III-nitrid ultraviolet photonic crystal light-emitting diodes," Appl. Phys. Lett., vol.85, pp. 142-144, 2004.
8. H. Ichikawa and T. Baba, "Efficiency enhancement in a light-emitting diode with a two-dimensional surface grating photonic crystal," Appl. Phys. Lett., vol.84, pp. 457-459, 2004.
9. C. H. Chiu, T. C. Lu, H. W. Huang, C. F. Lai, C. C. Kao, J. T. Chu, C. C. Yu, H. C. Kuo, S. C. Wang, C. F. Lin, and T. H. Hsueh, "Fabrication of InGaN/GaN nanorod light-emitting diodes with self-assembled Ni metal islands," Nanotechnology, vol.18, pp. 445201-1-445201-4, 2007.
10. R. Horng, S. Huang, C. Yang, D. Wuu, and C. Jina, "Efficiency improvement of GaN-based LEDs with ITO texturing window layers using natural lithgraphy," IEEE J. Sel. Topics Quantum Electron., vol.12, no.6, pp. 1196-1201, Nov./Dec. 2006.
11. M. Y. Hsieh, C. Y. Wang, L. Y. Chen, T. P. Lin, M. Y. Ke, Y. W. Cheng, Y. C. Yu, C. P. Chen, D. M. Yeh, C. F. Lu, C. F. Huang, C. C. Yang, and J. J. Huang, "Improvement of external extraction efficiency in GaN-based LEDs by SiO2 nanosphere lithography," IEEE Electron Device Lett., vol.29, no.7, pp. 658-660, Jul. 2008.
12. C. C. Tang, S. S. Fan, M. L. Chapelle, and P. Li, "Silica-assisted catalytic growth of oxide and nitride nanowires," Chem. Phys. Lett., vol.333, pp. 12-15, 2001. (Pubitemid 33627928)
13. C.-C. Chen and C.-C. Yeh, "Large-scale catalytic synthesis of crystalline gallium nitride nanowires," Adv. Mater., vol.12, pp. 738-741, 2000.
14. P. Cheyssac, M. Sacilotti, and G. Patriarche, "Vapor-liquid-solid mechanisms: Challenges for nanosized quantum cluster/dot/wire materials," J. Appl. Phys., vol.100, pp. 044315-1-044315-12, 2006.
15. Y. H. Kim, J. Y. Lee, S.-H. Lee, J.-E. Oh, and H. S. Lee, "Synthesis of aligned GaN nanorods on Si(111) by molecular beam epitaxy," Appl. Phys. A, vol.80, pp. 1635-1639, 2005.
16. S. Y. Kuo, C. C. Kei, C. N. Hsiao, and C. K. Chao, "Growth of gallium nitride nanorods by metalorganic molecular beam epitaxy," J. Vac. Sci. Technol. B, vol.24, pp. 695-699, Mar. 2006.
17. G. R. Lin, C. J. Lin, H. C. Kuo, H. S. Lin, and C. C. Kao, "Anomalous microphotoluminescence of high-aspect-ratio Si nanopillarsformatted by dry-etching Si substrate with self-aggregated Ni nanodot mask," Appl. Phys. Lett., vol.90, pp. 143102-1-143102-3, 2007.
18. M. Y. Hsieh, C. Y. Wang, L. Y. Chen, M. Y. Ke, and J. J. Huang, "InGaN-GaN nanorod light emitting arrays fabricated by silica nanomasks," IEEE J. Quantum Electron., vol.44, no.5, pp. 695-699, May 2008.
19. C. Y. Wang, L. Y. Chen, C. P. Chen, Y. W. Cheng, M. Y. Ke, M. Y. Hsieh, H. M. Wu, L. H. Peng, and J. J. Huang, "GaN nanorod light emitting diode arrays with a nearly constant electroluminescent peak wavelength," Opt. Express, vol.16, pp. 10549-10556, 2008.