Overgrowth of GaN on Be-doped coalesced GaN nanocolumn layer by rf-plasma-assisted molecular-beam epitaxy-Formation of high-quality GaN microcolumns

Journal of Crystal Growth

Volumn 311, Issue 10, 2009, Pages 2956-2961

  Kato, Kei ^a   Kishino, Katsumi ^a,b   Sekiguchi, Hiroto ^a,b   Kikuchi, Akihiko ^a,b  

^a SOPHIA UNIVERSITY   (Japan)

^b JAPAN SCIENCE AND TECHNOLOGY AGENCY   (Japan)

Author keywords

A1. Nanostructures; A3. Molecular beam epitaxy; B1. Microcolumn; B1. Nanocolumn; B1. Nitrides; B2. Semiconducting III V materials

Indexed keywords

A1. NANOSTRUCTURES; A3. MOLECULAR-BEAM EPITAXY; B1. MICROCOLUMN; B1. NANOCOLUMN; B1. NITRIDES; B2. SEMICONDUCTING III-V MATERIALS;

CRYSTAL GROWTH; CRYSTALS; GALLIUM NITRIDE; MOLECULAR BEAMS; NANOSTRUCTURES; OPTICAL PROPERTIES; PLASMAS; SEMICONDUCTING GALLIUM;

GALLIUM ALLOYS;

EID: 65749098832     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.jcrysgro.2009.01.057     Document Type: Article

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