VLS growth of GaN nanowires on various substrates

Journal of Crystal Growth

Volumn 310, Issue 23, 2008, Pages 5123-5128

  Gottschalch, V ^a   Wagner, G ^a   Bauer, J ^a   Paetzelt, H ^a   Shirnow, M ^a  

^a UNIVERSITY OF LEIPZIG   (Germany)

Author keywords

A1. Nanostructures; A3. Metalorganic vapour phase epitaxy; B2. Semiconducting III V material

Indexed keywords

CRYSTAL GROWTH; DROP FORMATION; DROPS; ELECTRIC WIRE; GALLIUM NITRIDE; LIQUID PHASE EPITAXY; NANOSTRUCTURED MATERIALS; NANOSTRUCTURES; NANOWIRES; SEMICONDUCTING GALLIUM; SEMICONDUCTOR GROWTH; SURFACE STRUCTURE; VAPOR PHASE EPITAXY; WIRE; ZINC; ZINC SULFIDE;

A1. NANOSTRUCTURES; A3. METALORGANIC VAPOUR PHASE EPITAXY; B2. SEMICONDUCTING III-V MATERIAL; DI METHYL HYDRAZINES; DROPLET FORMATIONS; GAN GROWTHS; GROWTH CONDITIONS; GROWTH OF GAN; IN-SITU; INTERMEDIATE LAYERS; METALORGANIC VAPOUR PHASE EPITAXIES; TEMPERATURE DEPOSITIONS; TRIETHYL GALLIUMS; TRIMETHYL GALLIUMS; VLS GROWTHS; WIRE GROWTHS; WURTZITE; ZINC BLENDES;

GALLIUM ALLOYS;

EID: 56249093431     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.jcrysgro.2008.08.013     Document Type: Article

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