Structural characterization of GaN grown by hydrogen-assisted ECR-MBE using electron microscopy

Journal of Crystal Growth

Volumn 209, Issue 2-3, 2000, Pages 368-372

  Araki, T ^a   Chiba, Y ^a   Nobata, M ^a   Nishioka, Y ^a   Nanishi, Y ^a  

^a RITSUMEIKAN UNIVERSITY   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRON CYCLOTRON RESONANCE; ELECTRON MICROSCOPY; HYDROGEN; MOLECULAR BEAM EPITAXY; NITRIDES; PLASMA APPLICATIONS; SEMICONDUCTOR GROWTH; STACKING FAULTS; TRANSMISSION ELECTRON MICROSCOPY;

GALLIUM NITRIDE;

SEMICONDUCTING GALLIUM COMPOUNDS;

EID: 0034140912     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0022-0248(99)00572-2     Document Type: Article

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