Coalescence overgrowth of GaN nanocolumns on sapphire with patterned metal organic vapor phase epitaxy

Journal of Applied Physics

Volumn 105, Issue 2, 2009, Pages

  Tang, Tsung Yi ^a   Shiao, Wen Yu ^a   Lin, Cheng Hung ^a   Shen, Kun Ching ^a   Huang, Jeng Jie ^a   Ting, Shao Ying ^a   Liu, Tzu Chi ^a   Yang, C C ^a   Yao, Chiu Lin ^b   Yeh, Jui Hung ^b   Hsu, Ta Cheng ^b   Chen, Wei Chao ^a   Hsu, Hsu Cheng ^a   Chen, Li Chyong ^a  

^a NATIONAL TAIWAN UNIVERSITY   (Taiwan)

^b EPISTAR CORPORATION   (Taiwan)

Author keywords

[No Author keywords available]

Indexed keywords

ATOMIC FORCE MICROSCOPY; CATHODOLUMINESCENCE; COALESCENCE; COMMUNICATION CHANNELS (INFORMATION THEORY); CORUNDUM; CRYSTAL GROWTH; GALLIUM NITRIDE; LIGHT; LIGHT EMISSION; LIGHT EMITTING DIODES; LUMINESCENCE; METALLORGANIC VAPOR PHASE EPITAXY; ORGANIC CHEMICALS; ORGANIC COMPOUNDS; ORGANIC LIGHT EMITTING DIODES (OLED); ORGANOMETALLICS; SAPPHIRE; SEMICONDUCTING GALLIUM; SURFACE ROUGHNESS; VAPORS;

AFM; ATOMIC-FORCE MICROSCOPIES; C-PLANE SAPPHIRE SUBSTRATES; CONTROL SAMPLES; DISLOCATION DENSITIES; DOMAIN STRUCTURES; GAN TEMPLATES; HIGH QUALITIES; LATERAL DOMAINS; LIGHT EMITTING DIODE LEDS; LOW TEMPERATURES; METAL-ORGANIC CHEMICAL VAPOR DEPOSITIONS; METAL-ORGANIC VAPOR PHASE EPITAXIES; MICRON-SCALE; NANO-COLUMNS; ORDER OF MAGNITUDES; PHOTOLUMINESCENCE INTENSITIES; ROOM TEMPERATURES; SAPPHIRE SUBSTRATES; THIN-FILM; THREE ORDERS OF MAGNITUDES; X-RAY DIFFRACTION MEASUREMENTS;

GALLIUM ALLOYS;

EID: 59349110463     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.3065527     Document Type: Article

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