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Volumn 85, Issue 9, 1999, Pages 6492-6496

Nanoheteroepitaxy: The application of nanostructuring and substrate compliance to the heteroepitaxy of mismatched semiconductor materials

(2) Zubia, D a Hersee, S D a

a UNIVERSITY OF NEW MEXICO (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CRYSTAL LATTICES; DISLOCATIONS (CRYSTALS); EPITAXIAL GROWTH; LITHOGRAPHY; NANOSTRUCTURED MATERIALS; NUCLEATION; SEMICONDUCTING FILMS; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTING INDIUM PHOSPHIDE; STRAIN; STRESS RELIEF; SUBSTRATES;

GALLIUM INDIUM PHOSPHIDE; LATTICE MISMATCH; NANOHETEROEPITAXY THEORY; STRAIN ENERGY; STRAIN PARTITIONING;

HETEROJUNCTIONS;

EID: 0032620707 PISSN: 00218979 EISSN: None Source Type: Journal
DOI: 10.1063/1.370153 Document Type: Article

Times cited : (249)

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