Characterizing the thickness dependence of epitaxial GaN grown over GaN nanocolumns using X-ray diffraction

Journal of Crystal Growth

Volumn 310, Issue 13, 2008, Pages 3159-3162

  Shiao, Wen Yu ^a   Tang, Tsung Yi ^a   Chen, Yung Sheng ^a   Averett, K L ^b   Albrecht, J D ^b   Yang, C C ^a  

^a NATIONAL TAIWAN UNIVERSITY   (Taiwan)

^b AIR FORCE RESEARCH LABORATORY   (United States)

Author keywords

A1. Nanostructures; A3. Metalorganic chemical vapor deposition; A3. Molecular beam epitaxy; B1. Nitrides

Indexed keywords

EPITAXIAL GROWTH; FILM THICKNESS; METALLORGANIC CHEMICAL VAPOR DEPOSITION; MOLECULAR BEAM EPITAXY; NANOSTRUCTURES; X RAY DIFFRACTION;

GROWTH PARAMETERS; NANOCOLUMNS; ROCKING-CURVE WIDTHS; SUBSTRATE TEMPERATURES;

GALLIUM NITRIDE;

EID: 44549085826     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.jcrysgro.2008.04.006     Document Type: Article

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