Fabrication of GaN-based nanorod light emitting diodes using self-assemble nickel nano-mask and inductively coupled plasma reactive ion etching

Materials Science and Engineering: B

Volumn 113, Issue 2, 2004, Pages 125-129

  Huang, Hung Wen ^a   Kao, Chih Chiang ^a   Hsueh, Tao Hung ^a   Yu, Chang Chin ^b   Lin, Chia Feng ^c   Chu, Jung Tang ^a   Kuo, Hao Chung ^a   Wang, Shing Chung ^a  

^a NATIONAL CHIAO TUNG UNIVERSITY   (Taiwan)

^b Global Union Technology Corporation   (Taiwan)

^c NATIONAL CHUNG HSING UNIVERSITY   (Taiwan)

Author keywords

Gallium nitride (GaN); Inductively coupled plasma (ICP); Nanorod; Nickel

Indexed keywords

ANNEALING; ELECTRON BEAMS; GALLIUM NITRIDE; METALLORGANIC CHEMICAL VAPOR DEPOSITION; NICKEL; PLASMA ETCHING; QUANTUM CRYPTOGRAPHY; REACTIVE ION ETCHING; SAPPHIRE; SELF ASSEMBLY; SEMICONDUCTOR QUANTUM WELLS; SUBSTRATES; THIN FILMS; TRANSMISSION ELECTRON MICROSCOPY;

BUFFER LAYERS; ETCHANT GASES; INDUCTIVELY COUPLED PLASMA (ICP); NANORODS;

LIGHT EMITTING DIODES;

EID: 4644220122     PISSN: 09215107     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0921-5107(04)00280-6     Document Type: Article

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