Defect reduction by periodic SiNx interlayers in gallium nitride grown on Si (111)

Journal of Applied Physics

Volumn 101, Issue 9, 2007, Pages

  Zang, K Y ^b   Wang, Y D ^a   Wang, L S ^a   Chow, S Y ^a   Chua, S J ^a  

^a SINGAPORE MIT ALLIANCE   (Singapore)

^b INSTITUTE OF MATERIALS RESEARCH AND ENGINEERING   (Singapore)

Author keywords

[No Author keywords available]

Indexed keywords

ATOMIC FORCE MICROSCOPY; DISLOCATIONS (CRYSTALS); ELECTRON ENERGY LOSS SPECTROSCOPY; GALLIUM NITRIDE; METALLORGANIC CHEMICAL VAPOR DEPOSITION; SEMICONDUCTOR GROWTH; SILICON NITRIDE;

DISLOCATION DENSITY; PERIODIC CONDUCTION; PIT DEFECTS; SURFACE PIT DENSITY;

THIN FILMS;

EID: 34248550161     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.2724793     Document Type: Conference Paper

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