Improvement in aligned GaN nanowire growth using submonolayer Ni catalyst films

Applied Physics Letters

Volumn 93, Issue 4, 2008, Pages

  Li, Qiming ^a   Wang, George T ^a  

^a SANDIA NATIONAL LABORATORIES   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ACTIVATION ENERGY; CATALYSIS; CORUNDUM; ELECTRIC WIRE; FILM GROWTH; GALLIUM ALLOYS; GALLIUM NITRIDE; MOLECULAR BEAM EPITAXY; NANOSTRUCTURED MATERIALS; NANOSTRUCTURES; NANOWIRES; NICKEL; SAPPHIRE; SEMICONDUCTING GALLIUM; SURFACE DIFFUSION; ULTRATHIN FILMS;

DEGREE OF ALIGNMENT; GAN NANOWIRE; GAN NANOWIRES; HIGH ACTIVATION ENERGY; HIGH-DENSITY; HIGHLY SENSITIVE; NANOWIRE GROWTH; NARROW SIZE DISTRIBUTIONS; NI CATALYSTS; NI DIFFUSION; NI FILMS; SAPPHIRE SURFACES; SINGLE-CRYSTALLINE; SUB MONOLAYERS; ULTRA-HIGH DENSITY;

NICKEL ALLOYS;

EID: 49149126478     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.2965798     Document Type: Article

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