InGaN/GaN multiple quantum disk nanocolumn light-emitting diodes grown on (111) Si substrate

Japanese Journal of Applied Physics, Part 2: Letters

Volumn 43, Issue 12 A, 2004, Pages

  Kikuchi, Akihiko ^a   Kawai, Mizue ^a   Tada, Makoto ^a   Kishino, Katsumi ^a  

^a SOPHIA UNIVERSITY   (Japan)

Author keywords

GaN; InGaN; Light emitting diodes; Molecular beam epitaxy; Nanocolumn; Nanorod

Indexed keywords

CAPACITANCE; ELECTRIC POTENTIAL; ELECTRODES; ELECTROLUMINESCENCE; FABRICATION; FILM GROWTH; GALLIUM NITRIDE; HETEROJUNCTIONS; MOLECULAR BEAM EPITAXY; OPTICAL PROPERTIES; PHOTOLUMINESCENCE; SEMICONDUCTING INDIUM COMPOUNDS; SEMICONDUCTOR LASERS; SUBSTRATES; TRANSMISSION ELECTRON MICROSCOPY;

INGAN; MULTIPLE QUANTUM DISK (MQD); NANOCOLUMNS; NANORODS; OPTICAL POWER DENSITY;

LIGHT EMITTING DIODES;

EID: 12844256364     PISSN: 00214922     EISSN: None     Source Type: Journal    
DOI: 10.1143/JJAP.43.L1524     Document Type: Article

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