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Applied Physics Letters

Volumn 77, Issue 19, 2000, Pages 2988-2990

Dependence of composition fluctuation on indium content in InGaN/GaN multiple quantum wells

(10) Lin, Yen Sheng a Ma, Kung Jeng a Hsu, C a Feng, Shih Wei b Cheng, Yung Chen b Liao, Chi Chih b Yang, C C b Chou, Chang Cheng c Lee, Chia Ming c Chyi, Jen Inn c

a NATIONAL DEFENSE UNIVERSITY (Taiwan)

b NATIONAL TAIWAN UNIVERSITY (Taiwan)

c NATIONAL CENTRAL UNIVERSITY (Taiwan)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0000556986 PISSN: 00036951 EISSN: None Source Type: Journal
DOI: 10.1063/1.1323542 Document Type: Article

Times cited : (252)

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