The controlled growth of GaN nanowires

Nano Letters

Volumn 6, Issue 8, 2006, Pages 1808-1811

  Hersee, Stephen D ^a   Sun, Xinyu ^a   Wang, Xin ^a  

^a University of New Mexico   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

INTERFEROMETRIC LITHOGRAPHY; NANOWIRES; PRECURSORS; SELECTIVE GROWTH MASK;

CATALYST ACTIVITY; METALLORGANIC CHEMICAL VAPOR DEPOSITION; NANOTECHNOLOGY; PHOTOLUMINESCENCE; SEMICONDUCTOR GROWTH; TRANSMISSION ELECTRON MICROSCOPY;

GALLIUM NITRIDE;

GALLIUM; GALLIUM NITRIDE; NANOTUBE;

ARTICLE; CHEMISTRY; CONFORMATION; CRYSTALLIZATION; LIGHT; LUMINESCENCE; MATERIALS TESTING; METHODOLOGY; NANOTECHNOLOGY; PARTICLE SIZE; RADIATION EXPOSURE; SEMICONDUCTOR; ULTRASTRUCTURE;

CRYSTALLIZATION; GALLIUM; LIGHT; LUMINESCENCE; MATERIALS TESTING; MOLECULAR CONFORMATION; NANOTECHNOLOGY; NANOTUBES; PARTICLE SIZE; SEMICONDUCTORS;

EID: 33748306266     PISSN: 15306984     EISSN: None     Source Type: Journal    
DOI: 10.1021/nl060553t     Document Type: Article

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