Strain relaxation and quantum confinement in InGaN/GaN nanoposts

Nanotechnology

Volumn 17, Issue 5, 2006, Pages 1454-1458

  Chen, Horng Shyang ^a   Yeh, Dong Ming ^a   Lu, Yen Cheng ^a   Chen, Cheng Yen ^a   Huang, Chi Feng ^a   Tang, Tsung Yi ^a   Yang, C C ^a   Wu, Cen Shawn ^a,b   Chen, Chii Dong ^b  

^a NATIONAL TAIWAN UNIVERSITY   (Taiwan)

^b INSTITUTE OF PHYSICS   (Taiwan)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRON BEAM LITHOGRAPHY; PHOTOLUMINESCENCE; QUANTUM THEORY; REACTIVE ION ETCHING; SEMICONDUCTING INDIUM COMPOUNDS; SEMICONDUCTOR LASERS;

BLUE-SHIFT; CARRIER SCREENING; INGAN/GAN NANOPOSTS; QUANTUM CONFINEMENT;

NANOSTRUCTURED MATERIALS;

EID: 33144483699     PISSN: 09574484     EISSN: None     Source Type: Journal    
DOI: 10.1088/0957-4484/17/5/048     Document Type: Article

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