Fabrication of InGaN/GaN nanorod light-emitting diodes with self-assembled Ni metal islands

Nanotechnology

Volumn 18, Issue 44, 2007, Pages

  Chiu, C H ^a   Lu, T C ^a   Huang, H W ^a   Lai, C F ^a   Kao, C C ^a   Chu, J T ^a   Yu, C C ^a   Kuo, H C ^a   Wang, S C ^a   Lin, C F ^b   Hsueh, T H ^c  

^a NATIONAL CHIAO TUNG UNIVERSITY   (Taiwan)

^b NATIONAL CHUNG HSING UNIVERSITY   (Taiwan)

^c NATIONAL CHENG KUNG UNIVERSITY   (Taiwan)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTROLUMINESCENCE SPECTRUM; INDUCTIVELY COUPLED PLASMA REACTIVE-ION ETCHING (ICP-RIE); PHOTO-ENHANCED CHEMICAL (PEC);

ELECTROLUMINESCENCE; NANORODS; NICKEL; OXIDATION; PHOTOLUMINESCENCE; SELF ASSEMBLY;

LIGHT EMITTING DIODES;

GALLIUM NITRIDE; NANOROD; NICKEL; UNCLASSIFIED DRUG;

ARTICLE; LIGHT EMITTING DIODE; OXIDATION; PHOTOLUMINESCENCE; PRIORITY JOURNAL; SPECTRAL SENSITIVITY;

EID: 36048957277     PISSN: 09574484     EISSN: 13616528     Source Type: Journal    
DOI: 10.1088/0957-4484/18/44/445201     Document Type: Article

References (12)

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