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Volumn 18, Issue 44, 2007, Pages

Fabrication of InGaN/GaN nanorod light-emitting diodes with self-assembled Ni metal islands

Author keywords

[No Author keywords available]

Indexed keywords

ELECTROLUMINESCENCE SPECTRUM; INDUCTIVELY COUPLED PLASMA REACTIVE-ION ETCHING (ICP-RIE); PHOTO-ENHANCED CHEMICAL (PEC);

EID: 36048957277     PISSN: 09574484     EISSN: 13616528     Source Type: Journal    
DOI: 10.1088/0957-4484/18/44/445201     Document Type: Article
Times cited : (126)

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  • 3
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    • InGaN/GaN multiple quantum disk nanocolumn light-emitting diodes grown on (111) Si substrate
    • Kikuchi A, Kawai M, Tada M and Kishino K 2004 InGaN/GaN multiple quantum disk nanocolumn light-emitting diodes grown on (111) Si substrate Japan. J. Appl. Phys. 43 L1524
    • (2004) Japan. J. Appl. Phys. , vol.43 , Issue.12 A , pp. 1524
    • Kikuchi, A.1    Kawai, M.2    Tada, M.3    Kishino, K.4
  • 4
    • 79955990342 scopus 로고    scopus 로고
    • Growth and characterization of single-crystal GaN nanorods by hydride vapor phase epitaxy
    • Kim H M, Kim D S, Kang T W, Cho Y H and Chung K S 2002 Growth and characterization of single-crystal GaN nanorods by hydride vapor phase epitaxy Appl. Phys. Lett. 81 2193
    • (2002) Appl. Phys. Lett. , vol.81 , Issue.12 , pp. 2193
    • Kim, H.M.1    Kim, D.S.2    Kang, T.W.3    Cho, Y.H.4    Chung, K.S.5
  • 5
    • 0030854137 scopus 로고    scopus 로고
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    • Han W Q, Fan S S, Li Q Q and Hu Y D 1997 Synthesis of gallium nitride nanorods through a carbon nanotube-confined reaction Science 277 1287
    • (1997) Science , vol.277 , Issue.5330 , pp. 1287
    • Han, W.Q.1    Fan, S.S.2    Li, Q.Q.3    Hu, Y.D.4
  • 8
    • 0344872650 scopus 로고    scopus 로고
    • Formation of low-temperature self-organized nanoscale nickel metal islands
    • Carey J D, Ong L L and Silva S R P 2003 Formation of low-temperature self-organized nanoscale nickel metal islands Nanotechnology 14 1223
    • (2003) Nanotechnology , vol.14 , Issue.11 , pp. 1223
    • Carey, J.D.1    Ong, L.L.2    Silva, S.R.P.3
  • 9
    • 1842843653 scopus 로고    scopus 로고
    • High reliability GaN-based light-emitting diodes with photo-enhanced wet etching
    • Chen L C and Huang Y L 2004 High reliability GaN-based light-emitting diodes with photo-enhanced wet etching Solid State Electron. 48 1239
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  • 11
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    • Fabrication and photoluminescence of InGaN-based nanorods fabricated by plasma etching with nanoscale nickel metal islands
    • Huang H W, Chu J T, Hsueh T H, Ou-Yang M C, Kuo H C and Wang S C 2006 Fabrication and photoluminescence of InGaN-based nanorods fabricated by plasma etching with nanoscale nickel metal islands J. Vac. Sci. Technol. B 24 1909
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    • Enhanced light output in nitride-based light-emitting diodes by roughening the mesa sidewall
    • Lin C F, Yang Z J, Zheng J H and Dai J J 2005 Enhanced light output in nitride-based light-emitting diodes by roughening the mesa sidewall Photon. Technol. Lett. 17 2038
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* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.