SiGe heterojunction bipolar transistors and circuits toward terahertz communication applications

IEEE Transactions on Microwave Theory and Techniques

Volumn 52, Issue 10, 2004, Pages 2390-2408

  Rieh, Jae Sung ^a,b   Jagannathan, Basanth ^a   Greenberg, David R ^a   Meghelli, Mounir ^c   Rylyakov, Alexander ^c   Guarin, Fernando ^a   Yang, Zhijian ^a   Ahlgren, David C ^a   Freeman, Greg ^a   Cottrell, Peter ^a   Harame, David ^a  

^a IBM RESEARCH   (United States)

^b Korea University   (South Korea)

^c IBM T J WATSON RESEARCH CENTER   (United States)

Author keywords

BiCMOS integrated circuits; Communication systems; Heterojunction bipolar transistors (HBTs); High speed integrated circuits

Indexed keywords

BANDWIDTH; CMOS INTEGRATED CIRCUITS; COMMUNICATION SYSTEMS; FREQUENCIES; IMPATT DIODES; PLASMA DIAGNOSTICS; SEMICONDUCTING SILICON COMPOUNDS; SIGNAL PROCESSING; SUBSTRATES; VARIABLE FREQUENCY OSCILLATORS;

BICMOS INTEGRATED CIRCUITS; BROAD-BAND COMMUNICATION SYSTEMS; ELECTROMAGNETIC SPECTRUM; HIGH SPEED INTEGRATED CIRCUITS;

HETEROJUNCTION BIPOLAR TRANSISTORS;

EID: 6944252130     PISSN: 00189480     EISSN: None     Source Type: Journal    
DOI: 10.1109/TMTT.2004.835984     Document Type: Article

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