Reliability of high-speed SiGe heterojunction bipolar transistors under very high forward current density

IEEE Transactions on Device and Materials Reliability

Volumn 3, Issue 2, 2003, Pages 31-38

  Rieh, Jae Sung ^a   Watson, Kimball M ^a   Guarin, Fernando ^a   Yang, Zhijian ^a   Wang, Ping Chuan ^a   Joseph, Alvin J ^a   Freeman, Greg ^a   Subbanna, Seshadri ^a  

^a IBM   (United States)

Author keywords

Bipolar transistors; Reliability; Stress measurement

Indexed keywords

CURRENT DENSITY; DEGRADATION; HEAT RESISTANCE; SEMICONDUCTING SILICON COMPOUNDS; SILICON WAFERS;

BROADBAND SYSTEMS; SELF HEATING EFFECTS; STRESS MEASUREMENT;

HETEROJUNCTION BIPOLAR TRANSISTORS;

EID: 0347119672     PISSN: 15304388     EISSN: None     Source Type: Journal    
DOI: 10.1109/TDMR.2003.813990     Document Type: Article

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