Noise behavior in SiGe devices

Solid-State Electronics

Volumn 45, Issue 11, 2001, Pages 1891-1897

  Regis M ^a,b   Borgarino, M ^a   Bary, L ^a   Llopis, O ^a   Graffeuil, J ^a   Escotte, L ^a   Koenig, U ^c   Plana, R ^a  

^a LAAS CNRS   (France)

^b SiGe Semiconductor   (Canada)

^c DAIMLER AG   (Germany)

Author keywords

1 f noise; Low phase noise; Noise figure; SiGe Heterojunction

Indexed keywords

HETEROJUNCTIONS; MICROWAVE OSCILLATORS; SEMICONDUCTING SILICON COMPOUNDS; SPURIOUS SIGNAL NOISE;

LOW PHASE NOISE;

SEMICONDUCTOR DEVICES;

EID: 0035501201     PISSN: 00381101     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0038-1101(01)00229-5     Document Type: Review

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