Submicron scaling of HBTs

IEEE Transactions on Electron Devices

Volumn 48, Issue 11, 2001, Pages 2606-2624

  Rodwell, M J W ^a   Urteaga, M ^a   Mathew, T ^a   Scott, D ^a   Mensa, D ^a   Lee, Q ^a   Guthrie, J ^a   Betser, Y ^a   Martin, S C ^a   Smith, R P ^a   Jaganathan, S ^a   Krishnan, S ^a   Long, S I ^a   Pullela, R ^a   Agarwal, B ^a   Bhattacharya, U ^a   Samoska, L ^a   Dahlstrom, M ^a  

^a University of California   (United States)

Author keywords

Heterojunction bipolar transistors; Integrated circuits (ICs)

Indexed keywords

BANDWIDTH; CAPACITANCE MEASUREMENT; CURRENT DENSITY; ELECTRIC CONDUCTIVITY MEASUREMENT; ELECTRON TRANSPORT PROPERTIES; MICROSTRIP DEVICES; OHMIC CONTACTS;

EMITTER CONTACT RESISTIVITY; WIRING CAPACITANCE;

HETEROJUNCTION BIPOLAR TRANSISTORS;

EID: 6644225001     PISSN: 00189383     EISSN: None     Source Type: Journal    
DOI: 10.1109/16.960387     Document Type: Article

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