Low-noise performance near BVCEO in a 200 GHz SiGe technology at different collector design points

IEEE MTT-S International Microwave Symposium Digest

Volumn 1, Issue , 2003, Pages 113-116

  Greenberg, D ^b   Sweeney, S ^c   Freeman, G ^a   Ahlgren, D ^a  

^a IBM MICROELECTRONICS   (United States)

^b IBM RESEARCH   (United States)

^c NONE

Author keywords

[No Author keywords available]

Indexed keywords

AVALANCHE DIODES; ELECTRIC BREAKDOWN; GAIN MEASUREMENT; SEMICONDUCTOR DOPING; SILICON COMPOUNDS; SPURIOUS SIGNAL NOISE;

COLLECTOR DESIGN;

HETEROJUNCTION BIPOLAR TRANSISTORS;

EID: 0041663741     PISSN: 0149645X     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (4)

1. T SiGe technology," IEEE J. Solid State Circuits, vol. 37 no. 9, pp. 1106-1114, 2002.
2. D. Greenberg, S. Sweeney, C. LaMothe, K. Jenkins, D. Friedman, B. Martin Jr., G. Freeman, D. Ahlgren, S. Subbanna and A. Joseph, "Noise performance and considerations for integrated RF/analog/mixed-signal design in a high-performance SiGe BiCMOS technology," Tech. Dig. IEEE Int. Electron Device Meeting, pp. 495-498, 2001.
3. D.R. Greenberg, B. Jagannathan, S. Sweeney, G. Freeman and D. Ahlgren, "Noise performance of a low base resistance 200 GHz SiGe technology," to be presented at IEEE Int. Electron Device Meeting, 2002.
4. T in a manufacturable technology," IEEE Electron Device Lett., vol. 23, no.5, 2002.