Influence of impact-ionization-induced instabilities on the maximum usable output voltage of Si-bipolar transistors

IEEE Transactions on Electron Devices

Volumn 48, Issue 4, 2001, Pages 774-783

  Rickelt, Matthias ^a,b   Rein, Hans Martin ^a,b   Rose, Eduard ^b,c  

^a IEEE   (Germany)

^b RUHR UNIVERSITY BOCHUM   (Germany)

^c NOKIA RESEARCH CENTER   (United States)

Author keywords

Bipolar transistors; Breakdown voltage; Impact ionization

Indexed keywords

IMACT-IONIZATION-INDUCED INSTABILITIES;

ELECTRIC BREAKDOWN; ELECTRIC CURRENTS; ELECTRIC POTENTIAL; IMPACT IONIZATION; SEMICONDUCTING SILICON;

BIPOLAR TRANSISTORS;

EID: 0035307349     PISSN: 00189383     EISSN: None     Source Type: Journal    
DOI: 10.1109/16.915725     Document Type: Article

References (19)

1. A versatile Si-bipolar driver circuit with high output voltage swing for external and direct laser modulation in 10 Gb/s optical-fiber links
2. Der Einfluss des basisbahnwider-standes und der ladungsträgermultiplikation auf das ausgangskennlinienfeld von planartransistoren
3. Relationship between transient response and output characteristics of avalanche transistors
4. Impact-ionization effects in advanced Si bipolar transistors
5. Impact-ionization induced instabilities in high-speed bipolar transistors and their influence on the maximum usable output voltage
6. Calculation of the breakdown characteristics of bipolar transistors using a two-dimensional model
7. Si and SiGe bipolar IC's for 10 to 40 Gb/s optical-fiber TDM links
8. Randverdrängung und einschnürung bei transistoren mit zylin-drischer geometrie
9. The effects of distributed base potential on emitter-current injection density and effective base resistance for stripe transistor geometries
10. Simulation and modeling of the low-frequency base resistance of bipolar transistors and its dependence on current and geometry
11. Experimental determination of the internal base sheet resistance of bipolar transistors under forward-bias conditions
12. Transient and small-signal high-frequency simulation of numerical device models embedded in an external circuit
13. Analytical current-voltage relations for compact SiGe HBT models
14. Ionization rates for electrons and holes in silicon
15. Measurement of the ionization rates in diffused silicon p-n junctions
16. Impact ionization in silicon: A review and update
17. Non-local impact ionization in silicon devices
18. SPICE modeling of impact ionization effects in silicon bipolar transistors
19. Base spreading resistance of square-emitter transistors and its dependence on current crowding