100 GHz dynamic frequency divider in SiGe bipolar technology

Electronics Letters

Volumn 39, Issue 2, 2003, Pages 217-218

  Rylyakov, A ^a   Klapproth, L ^b   Jagannathan, B ^c   Freeman, G ^c  

^a IBM T J WATSON RESEARCH CENTER   (United States)

^b SHE Communications Technologies AG   (Germany)

^c IBM MICROELECTRONICS   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CMOS INTEGRATED CIRCUITS; ELECTRIC NETWORK TOPOLOGY; HETEROJUNCTION BIPOLAR TRANSISTORS; SEMICONDUCTING INDIUM GALLIUM ARSENIDE; SEMICONDUCTING INDIUM PHOSPHIDE;

DYNAMIC FREQUENCY DIVIDER; STATIC FREQUENCY DIVIDERS;

FREQUENCY DIVIDING CIRCUITS;

EID: 0037461882     PISSN: 00135194     EISSN: None     Source Type: Journal    
DOI: 10.1049/el:20030164     Document Type: Article

References (6)

1. Tsunashima, S., Nakajima, H., Sano, E., Ida, M., Kurishima, K., Watanabe, N., Enoki, T., and Sugahara, H.: '90 GHz operation of a novel dynamic frequency divider using InP/InGaAs HBTs'. Indium Phosphide and Related Materials Conf., 2002, pp. 43-46
2. Washio, K., Ohue, E., Oda, K., Hayami, R. Tanabe, M. Shimamoto, H., Harada, T., and Kondo, M.: '82 GHz dynamic frequency divider in 5.5 ps ECL SiGe HBTs', ISSCC Dig. Tech. Pap.-IEE Int. Solid-State Circuits Conf., 2000, pp. 210-211
3. Mathew, T., Kim, H., Jaganathan, S., Scott, D., Krishnan, S., Wei, Y., Urteaga, M., Long, S., and Rodwell, M.: '75 GHz ECL static frequency divider using InAIAs/InGaAs HBTs', Electron. Lett., 2001, 37, pp. 667-668
4. Wurzer, M., Bock, J., Knapp, H., Aufinger, K., and Meister, T.: '71.8 GHz static frequency divider in a SiGe bipolar technology'. Proc. IEEE Bipolar/BiCMOS Circuits and Technology Mtg., Monterey, CA, USA, 2002, pp. 216-219
5. Jagannathan, B., Khater, M., Pagette, F., Rieh, J.-S., Angell, D., Chen, H., Florkey, J., Golan, F., Greenberg, D.R., Groves, R., Jeng, S., Johnson, J., Mengistu, E., Schonenberg, K., Schnabel, C., Smith, P., Stricker, A., Ahlgren, D., and Freeman, G.; 'Self-aligned site NPN transistors with 285 GHz f/sub MAX/ and 207 GHz f/sub T/ in a manufacturable technology', IEEE Electron Device Lett., 2002, 23, pp. 258-260
6. Knapp, H., Meister, T.F., Wurzer, M., Zoschg, D., Aufinger, K., and Treitlinger, L.: 'A 79 GHz dynamic frequency divider in SiGe bipolar technology', Dig. Tech. Pap.-IEE Int. Solid-State Circuits Conf., 2000, pp. 208-209