A high-speed low 1/f noise SiGe HBT technology using epitaxially-aligned polysilicon emitters

IEEE Transactions on Electron Devices

Volumn 46, Issue 7, 1999, Pages 1525-1531

  Jouan, Sébastien ^b   Planche, Richard ^c   Baudry, Hélène ^b   Ribot, Pascal ^b   Chroboczek, Jan A ^b   Dutartre, Didier ^b   Gloria, Daniel ^c   Laurens, Michel ^c   Llinares, Pierre ^c   Marty, Michel ^c   Monroy, Augustin ^c   Morin, Christine ^b   Pantel, Roland ^b   Perrotin, Andre ^c   De Pontcharra, Jean ^d   Regolini, Jorge Luis ^b   Vincent, Gilbert ^b   Chantre, Alain ^a,b  

^a IEEE   (France)

^b ORANGE LABS   (France)

^c STMICROELECTRONICS   (France)

^d CEA LETI   (France)

Author keywords

1 f noise; Bipolar; HBT; High frequency; Polysilicon emitter; SiGe

Indexed keywords

EPITAXIAL GROWTH; SEMICONDUCTING SILICON; SEMICONDUCTING SILICON COMPOUNDS; SEMICONDUCTOR DEVICE MANUFACTURE;

POLYSILICON EMITTERS;

HETEROJUNCTION BIPOLAR TRANSISTORS;

EID: 0032626822     PISSN: 00189383     EISSN: None     Source Type: Journal    
DOI: 10.1109/16.772506     Document Type: Article

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