Transferred-substrate HBTs with 250 GHz current-gain cutoff frequency

Technical Digest - International Electron Devices Meeting

Volumn , Issue , 1998, Pages 657-660

  Mensa, D ^a   Lee, Q ^a   Guthrie, J ^a   Jaganathan, S ^a   Rodwell, M J W ^a  

^a UNIVERSITY OF CALIFORNIA   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CURRENT VOLTAGE CHARACTERISTICS; GAIN CONTROL; SUBSTRATES;

CURRENT-GAIN CUTOFF FREQUENCY;

HETEROJUNCTION BIPOLAR TRANSISTORS;

EID: 0032266442     PISSN: 01631918     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (6)