A novel transistor model for simulating avalanche-breakdown effects in Si bipolar circuits

IEEE Journal of Solid-State Circuits

Volumn 37, Issue 9, 2002, Pages 1184-1197

  Rickelt, Matthias ^a,b   Rein, Hans Martin ^a,b  

^a IEEE   (Germany)

^b RUHR UNIVERSITY BOCHUM   (Germany)

Author keywords

Bipolar transistors; Breakdown voltage; Impact ionization; Transistor model

Indexed keywords

AVALANCHE-BREAKDOWN EFFECTS; SIX-TRANSISTOR MODEL;

AVALANCHE DIODES; COMPUTER SIMULATION; CRITICAL CURRENTS; ELECTRIC BREAKDOWN; ELECTRIC RESISTANCE; IMPACT IONIZATION; THREE DIMENSIONAL; TRANSIENTS;

BIPOLAR TRANSISTORS;

EID: 0036714379     PISSN: 00189200     EISSN: None     Source Type: Journal    
DOI: 10.1109/JSSC.2002.801197     Document Type: Conference Paper

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