High-speed InGaP/GaAs HBT's using a simple collector undercut technique to reduce base-collector capacitance

IEEE Electron Device Letters

Volumn 18, Issue 7, 1997, Pages 355-357

  Chen, W L ^a   Chau, H F ^a   Tutt, M ^a   Ho, M C ^a   Kim, T S ^a   Henderson, T ^a  

^a TEXAS INSTRUMENTS   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CAPACITANCE; CHEMICAL VAPOR DEPOSITION; ETCHING; FREQUENCY RESPONSE; PHOTOLITHOGRAPHY; SCANNING ELECTRON MICROSCOPY; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTING INDIUM PHOSPHIDE; SEMICONDUCTOR DEVICE MANUFACTURE; SEMICONDUCTOR DEVICE STRUCTURES; SEMICONDUCTOR DOPING;

COLLECTOR UNDERCUT TECHNIQUE; REDUCED BASE-COLLECTOR CAPACITANCE;

HETEROJUNCTION BIPOLAR TRANSISTORS;

EID: 0031192573     PISSN: 07413106     EISSN: None     Source Type: Journal    
DOI: 10.1109/55.596935     Document Type: Article

References (12)

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