Direct ion-implanted 0.12-μm GaAs MESFET with ft of 121 GHz and fmax of 160 GHz

IEEE Electron Device Letters

Volumn 20, Issue 5, 1999, Pages 245-247

  Hsia, H ^a   Tang, Z ^a   Caruth, D ^a   Becher, D ^a   Feng, M ^a  

^a University of Illinois at Urbana Champaign   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

FABRICATION; ION IMPLANTATION; MILLIMETER WAVES; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTOR DOPING; TRANSCONDUCTANCE;

CURRENT GAIN CUTOFF FREQUENCY; PEAK MAXIMUM OSCILLATION FREQUENCY;

MESFET DEVICES;

EID: 0032654957     PISSN: 07413106     EISSN: None     Source Type: Journal    
DOI: 10.1109/55.761028     Document Type: Article

References (8)

1. M. Feng, C. L. Law, V. Eu, and C. Ito, "Does two dimensional electron gas effect contribute to high frequency and high speed device performance?," Appl. Phys. Lett., vol. 59, no. 19, pp. 1233-1235, 1991.
2. M. Feng and J. Laskar, "On the speed and noise performance of direct ion-implanted GaAs MESFET's," IEEE Trans. Electron Devices, vol. 40, pp. 9-17, Jan. 1993.
3. M. Feng, D. R. Scherrer, P. J. Apostolakis, and J. W. Kruse, "Temperature dependent study of the microwave performance of 0.25-μm gate GaAs MESFET's and GaAs pseudomorphic HEMT's," IEEE Trans. Electron Devices, vol 43, pp. 852-860, June 1996.
4. D. Danzilio, "mm-Wave ion implanted low noise process transfer from the University of Illinois," in Proc. 1998 Conf. GaAs Manufact. Technol., pp. 111-114.
5. Y. Yamane, K. Nishimura, K. Inous, and M. Tokumitsu, "0.1 μm GaAs MESFET's fabricated using ion-implantation and photo-lithography," in GaAs IC Symp., 1993, vol. 21, pp. 185-188.
6. K. Nishimura, K. Onodera, S. Aoyama, M. Tokumitsu, and K. Yamaki, "High-performance 0.1-μm-self-aligned-gate GaAs MESFET technology," IEEE Trans. Electron Devices, vol. 44, pp. 2113-2119, 1997.
7. H. Hsia, J. Middelton, Z. Tang, R. Shimon, D. Caruth, D. Becher, J. Fendrich, and M. Feng, "A low cost 77 GHz MMIC's process using direct ion-implanted GaAs MESFET's," in Proc. 1998 Conf. GaAs Manufact. Technol., pp. 187-190.
8. R. Shimon, D. Caruth, J. Middleton, H. Hsia, and M. Feng, "Low cost coplanar 77 GHz Single-balanced mixed using ion-implanted GaAs Schottky diodes," in 1998 IEEE MTT-S Int. Symp. Dig., pp. 1439-1442.