Extremely low-noise performance of GaAs MESFET's with wide-head T-shaped gate

IEEE Transactions on Electron Devices

Volumn 46, Issue 2, 1999, Pages 310-319

  Onodera, Kiyomitsu ^a   Nishimura, Kazumi ^a   Aoyama, Shinji ^a   Sugitani, Suehiro ^a   Yamane, Yasuro ^a   Hirano, Makoto ^a  

^a NTT CORPORATION   (Japan)

Author keywords

Gaas; Gate resistance; MESFET; Noise performance; Semiconductor device fabrication

Indexed keywords

CAPACITANCE; ELECTRIC RESISTANCE; GATES (TRANSISTOR); SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTOR DEVICE MANUFACTURE;

MAXIMUM STABLE GAIN (MSG);

MESFET DEVICES;

EID: 0033079811     PISSN: 00189383     EISSN: None     Source Type: Journal    
DOI: 10.1109/16.740895     Document Type: Article

References (48)

1. T. Tambo, O. Ishikawa, H. Yagita, K. Inoue, and T. Onuma, "Lownoise GaAs-MESFET by dummy-gate self-alignment technology," in IEEE GaAs 1C Symp. Tech. Dig., 1987, pp. 49-52.
2. I. Banerjee, P. W. Chye, and P. E. Gregory, "Unusual C-V profiles of Siimplanted (211) GaAs substrates and unusually low-noise MESFET's fabricated on them," IEEE Electron. Device Lett., vol. 9, pp. 10-12, Jan. 1988.
3. C. L. Lau, M. Feng, T. R. Lepkowski, G. W. Wang, Y. Chang, and C. Ito, "half-micrometer gate-length ion-implanted GaAs MESFET with 0.8-dB noise figure at 16 GHz," IEEE Electron Device Lett., vol. 10, pp. 409-411, Sept. 1989.
4. K. Hosogi, N. Ayaki, T. Kato, Y. Kohno, H. Nakano, T. Shimura, H. Takano, and K. Nishitani, "Super low noise self-aligned gate GaAs MESFET with noise figure of 0.87 dB at 12 GHz," in MTT-S Dig., pp. 1257-1260, 1990.
5. S. Nakajima, K. Otobe, N. Kuwata, N. Shiga, K. Matsuzaki, and H. Hayashi, "Pulse-doped GaAs MESFET's with planar self-aligned gate for MMIC," in MTT-S Dig., pp. 1081-1084, 1990.
6. 1-xAs MESFET's," IEEE Electron Device Lett., vol. 12, pp. 244-246, May 1991.
7. M. Feng and J. Laskar, "On the speed and noise performance of direct ion-implanted GaAs MESFET's," IEEE Trans. Electron Devices, vol. 40, pp. 9-17, Jan. 1993.
8. D. R. Scherrer, D. Caruth, and M. Feng, "Diffusion noise of GaAs MESFET's and p-HEMT's," in Inst. Phys. Conf. Ser., 1997, no. 155, pp. 483-488.
9. K. Asai and T. Ishibashi, "GaAs-MESFET and HBT technology for picosecond electronics," in OSA Proc. Picosecond Electronics and Optoelectronics, 1989, pp. 139-142.
10. K. Onodera, K. Nishimura, K. Asai, and S. Sugitani, "High microwave and ultra-low noise performance of fully ion-implanted GaAs MESFET's with Au/WSiN T-shaped gate," IEEE Trans. Electron Devices, vol. 40, pp. 18-24, Jan. 1993.
11. K. Nishimura, K. Onodera, S. Aoyama, M. Tokumitsu, and K. Yamasaki, "High-performance 0.1-//m-self-aligned-gate GaAs MESFET technology," IEEE Trans. Electron Devices, vol. 44, pp. 2113-2119, Dec. 1997.
12. K. Asai, H. Sugahara, Y. Matsuoka, and M. Tokumitsu, "Refractory sputtered WSiN films suppress As and Ga outdiffusion," J. Vac. Sci. Technol. B, vol. 6, pp. 1526-1529, 1988.
13. J. Wurfl, B. Janke, E. Nebauer, S. Thierback, and P. Wolter, "Hightemperature MESFET based integrated circuits operating up to 300 °C," in IEDM Tech. Dig., 1997, pp. 219-222.
14. Y. Jin, C. Takahashi, K. Nishimura, T. Ono, and S. Matsuo, "0. l-ftm WSiN-gate fabrication of GaAs MESFET's using electron-cyclotronresonance ion-stream etching with SFe-CF4-SiF4-O2," J. Vac. Sci. Technol. B, vol. 15, pp. 2639-2642, 1997.
15. S. Sugitani, K. Yamasaki, and H. Yamazaki, "Characterization of a thin Si-implanted and rapid thermal annealed n-GaAs layers," Appl. Phys. Lett., vol. 51, pp. 806-808, 1987.
16. M. Hirano, K. Nishikawa, I. Toyoda, S. Aoyama, S. Sugitani, and K. Yamasaki, "Three-dimensional passive circuit technology for ultracompact MMIC's," in MTT-S. Dig., pp. 1447-1450, 1995.
17. K. W. Lee, K. Lee, M. S. Shur, T. T. Vu, P. C. T. Roberts, and M. J. Helix, "Source, drain and gate resistances in GaAs MESFET's," IEEE Trans. Electron Devices, Vol. ED32, pp. 987-992, June 1985.
18. F. Diamant and M. Laviron, "Measurement of the extrinsic series elements of the microwave MESFET under zero current condition," in Proc. 12th Europ. Microwave Conf., 1982, pp. 451-456.
19. W. Curtice and R. L. Camisa, "Self-consistent GaAs FET models," IEEE Trans. Microwave Theory Tech., vol. MTT-32, pp. 1573-1578, Dec. 1984.
20. G. Dambrine, A. Cappy, F. Heliodore, and E. Playez, "A new method for determining the FET small-signal equivalent circuit," IEEE Trans. Microwave Theory Tech., vol. 36, pp. 1151-1159, Dec. 1988.
21. R. Anholt and S. Swirhum, "Equivalent-circuit parameter extraction for cold GaAs MESFET's," IEEE Trans. Microwave Theory Tech., vol. 32, pp. 1243-1247, July 1991.
22. J. Mahon, C. Weichert, and J. P. Lanteri, "Unique determination of a scaleable FET model," in Dig. U.S. Conf. GaAs Manuf. Technol., pp. 58-62, 1989.
23. T. Shibata, "Circuit simulations combined with the electromagnetic field analysis," IEEE Trans. Microwave Theory Tech., vol. 39, pp. 1862-1868, Nov. 1991.
24. K. Tanaka, M. Ogawa, K. Togashi, H. Takakuwa, H. Ohke, M. Kanazawa, Y. Kato, and S. Watanabe, "Low-noise HEMT using MOCVD," IEEE Trans. Microwave Theory Tech., vol. MTT-34, pp. 1522-1528, Dec. 1986.
25. I. Hanyu, S. Asai, M. Nunokawa, K. Joshin, Y. Hirachi, Ohmura, Y. Aoki, and T. Aigo, "Super low noise HEMT's with a T-shaped WSij; gate," Electron. Lett., vol. 24, pp. 1327-1329, Oct. 1988.
26. K. H. G. Duh, P. C. Chao, P. M. Smith, L. F. Lester, B. R. Lee, J. M. Ballingall, and M. Y. Kao, "Millimeter-wave Low noise HEMT amplifier," in MTT-S Dig., pp. 923-926, 1988.
27. H. Kawasaki, T. Shiono, M. Kawano, and K. Kamei, "Super low noise AlGaAs/GaAs HEMT with one tenth micron gate," in MTT-S Dig., pp. 423-426, 1989.
28. P. C. Chao, P. H. Smith, K. H. G. Duh, J. M. Ballingall, L. F. Lester, B. R. Lee, A. A. Jabra, and R. C. Tiberio, "High-performance 0.1ftm gate-length planar-doped HEMT's," in IEDM Tech. Dig., 1987, pp. 410-413.
29. P. C. Chao, M. S. Shur, R. C. Timerio, K. H. G. Duh, P. M. Smith, J. M. Ballingall, P. Ho, and A. A. Jabra, "DC and microwave characteristics of sub-0.1-//m gate-length planar-doped pseudomorphic HEMT's," IEEE Trans. Electron Devices, vol. 36, pp. 461-4169, Mar. 1989.
30. K. L. Tan, R. M. Dia, D. C. Streit, T. Lin, T. Q. Trinh, A. C. Han, P. H. Liu, P.-M. D. Chow, and H. C. Yen, "94-GHz 0. \-fim pseudomorphic InGaAs HEMT's," IEEE Electron Device Lett., vol. 11, pp. 585-587, Dec. 1990.
31. K. L. Tan, R. M. Dia, D. C. Streit, L. K. Shaw, A. C. Han, M. D. Sholley, P. H. Liu, T. Q. Trinh, T. Lin, and H. C. Yen, "60-GHz pseudomorphic Alo.25Gao.75As/Ino.2sGao.72As low-noise HEMT's," IEEE Electron Device Lett., vol. 12, pp. 23-25, Jan. 1991.
32. J. Wenger, "Quarter-micrometer low-noise pseudomorphic GaAs HEMT's with extremely low dependence of noise figure on drainsource current," IEEE Electron Device Lett., vol. 14, pp. 16-18, Jan. 1993.
33. J.-H. Lee, H.-S. Yoon, C.-S. Park, and H.-M. Park, "Ultra low noise characteristics of AlGaAs/InGaAs/GaAs pseudomorphic HEMT's with wide head T-shaped gate," IEEE Electron Device Lett., vol. 6, pp. 271-273, June 1995.
34. Y. Ito, M. Nakayama, K. Nakahara, T. Takagi, T. Sakura, N. Yoshida, T. Katoh, T. Kashiwa, and Y. Ito, "A W-Band monolithic low noise AlGaAs/InGaAs pseudomorphic HEMT amplifier mounted on a small hermetically-sealed package with waveguide interface," in MTT-S Dig., pp. 207-210, 1995.
35. C. S. Wu, C. K. Pao, W. Yau, H. Kanber, M. Hu, S. X. Bar, A. Kurdoghlian, Z. Bardai, D. Bosch, C. Seashore, and M. Gawronski, "Pseudomorphic HEMT manufacturing technology for multifunctional Ka-Band MMIC applications," IEEE Trans. Microwave Theory Tech., vol. 43, pp. 257-266, Feb. 1995.
36. Y. Kwon, D. S. Deakin, E. A. Sovero, and J. A. Higgins, "Highperformance Ka-Band monolithic low-noise amplifier using 0.2-//m dry-recessed GaAs PHEMT's," IEEE Microwave Guided Wave Lett., vol. 6, pp. 253-255, July 1996.
37. K. Maruhashi, M. Funabashi, T. Inoue, M. Madihian, and M. Kuzuhara, "A 60 GHz-band low-noise HJFET amplifier module for wireless LAN applications," in MTT-S Dig., pp. 13-16, 1996.
38. S. Fujimoto, T. Katoh, T. Ishida, T. Oku, Y. Sasaki, T. Ishikawa, and Y. Mitsui, "Ka-band ultra low noise MMIC amplifier using pseudomorphic HEMT's," in MTT-S Dig., pp. 17-20, 1997.
39. Y. Kwon, E. A. Sovero, D. S. Deakin, and J. A. Higgins, "High performance X-band MMIC LNA's using dry recessed PHEMT's," Electron. Lett., vol. 33, pp. 817-818, 1997.
40. Y. Umeda, T. Enoki, K. Aral, and Y. Ishii, "Silicon nitride passivated ultra low noise InAlAs/InGaAs HEMT's with n-InGaAs/n-InAlAs cap layer," IEICE Trans. Electron., vol. E75-C, pp. 649-644, June 1992.
41. P. C. Chao, A. J. Tessmer, K. H. G. Duh, P. Ho, M. Y. Kao, P. M. Smith, J. M. Ballingall, S. M. J. Liu, and A. A. Jabra, "W-band lownoise InAlAs/InGaAs lattice-matched HEMT's," IEEE Electron Device Lett., vol. 11, pp. 59-61, Jan. 1990.
42. K. L. Tan, D. C. Streit, P. D. Chow, R. M. Dia, A. C. Han, P. H, Liu, D. Garske, and R. Lai, "140 GHz, 0.1 ftm gate-length pseudomorphic Ino.52 Alo.4gAs/Ino.6oGao.4oAs/InP HEMT," in IEDM Tech. Dig., 1991, pp. 239-242.
43. K. H. G. Duh, P. C. Chao, S. M. J. Liu, P. Ho, M. Y. Kao, and J. M. Ballingall, "A super low-noise 0. l-ftm T-gate InAlAs/InGaAs/InP HEMT," IEEE Microwave Guided Wave Lett., vol. 1, pp. 114-116, May 1991.
44. P. Ho, P. C. Chao, K. H. G. Duh, A. A. Jabra, J. M. Ballingall, and P. M. Smith, "Extremely high gain, low noise InAlAs/InGaAs HEMT's grown by molecular beam epitaxy," in IEDM Tech. Dig., 1988, pp. 184-187.
45. N. Yoshida, Y. Yamamoto, K. Katoh, H. Minami, T. Kitano, H. Takano, T. Sonoda, S. Takamiya, and S. Mitsui, "Low noise A1InAs/InGaAs HEMT using Wsi ohmic contact," Electron. Lett., vol. 30, pp. 1009-1010, 1994.
46. H. C. Duran, B.-U. H. Klepser, and W. Bachtold, "Low-noise properties of dry gate recess etched InP HEMT's," IEEE Electron Device Lett., vol. 17, pp. 482-484, Oct. 1996.
47. H. Fukui, "Optimal noise figure of microwave GaAs MESFET's, IEEE Trans. Electron Devices, Vol. ED26, pp. 1032-1037, July 1979.
48. P. Wolf, "Microwave property of Schottky-barrier field-effect transistors," IBM J. Res. Develop., vol. 14, pp. 125-141, 1970.