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1
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0036927963
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SiGe HBTs with cut-off frequency of 350 GHz
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J.-S. Rieh, B. Jagannathan, H. Chen, K. T. Schonenberg, D. Angell, A. Chinthakindi, J. Florkey, F. Golan, D. Greenberg, S.-J. Jeng, M. Khater, F. Pagette, C. Schnabel, P. Smith, A. Stricker, K. Vaed, R. Volant, D. Ahlgren, G. Freeman, K. Stein, and S. Subbanna, "SiGe HBTs with cut-off frequency of 350 GHz," Tech. Dig. IEEE Int. Electron Device Meeting, pp., 2002.
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Tech. Dig. IEEE Int. Electron Device Meeting
, pp. 2002
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Rieh, J.-S.1
Jagannathan, B.2
Chen, H.3
Schonenberg, K.T.4
Angell, D.5
Chinthakindi, A.6
Florkey, J.7
Golan, F.8
Greenberg, D.9
Jeng, S.-J.10
Khater, M.11
Pagette, F.12
Schnabel, C.13
Smith, P.14
Stricker, A.15
Vaed, K.16
Volant, R.17
Ahlgren, D.18
Freeman, G.19
Stein, K.20
Subbanna, S.21
more..
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2
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0035716094
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Noise performance and considerations for integrated RF/analog/mixed-signal design in a high-performance SiGe BiCMOS technology
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D. Greenberg, S. Sweeney, C. LaMothe, K. Jenkins, D. Friedman, B. Martin Jr., G. Freeman, D. Ahlgren, S. Subbanna and A. Joseph, "Noise performance and considerations for integrated RF/analog/mixed-signal design in a high-performance SiGe BiCMOS technology," Tech. Dig. IEEE Int. Electron Device Meeting, pp. 495-498, 2001.
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(2001)
Tech. Dig. IEEE Int. Electron Device Meeting
, pp. 495-498
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Greenberg, D.1
Sweeney, S.2
Lamothe, C.3
Jenkins, K.4
Friedman, D.5
Martin, B.6
Freeman, G.7
Ahlgren, D.8
Subbanna, S.9
Joseph, A.10
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3
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0036927331
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Noise performance of a low base resistance 200 GHz SiGe technology
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D. R. Greenberg, B. Jagannathan, S. Sweeney, G. Freeman and D. Ahlgren, "Noise performance of a low base resistance 200 GHz SiGe technology," Tech. Dig. IEEE Int. Electron Device Meeting, pp. 2002.
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Tech. Dig. IEEE Int. Electron Device Meeting
, pp. 2002
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Greenberg, D.R.1
Jagannathan, B.2
Sweeney, S.3
Freeman, G.4
Ahlgren, D.5
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4
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0035501201
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Noise behavior in SiGe devices
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M. Régis, M. Borgarino, L. Bary, O. Llopis, J. Graffeuil, L. Escotte, U. Koenig and R. Plana, "Noise behavior in SiGe devices," Solid-State Electronics, vol. 45, pp. 1891-1897, 2001.
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Solid-State Electronics
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, pp. 1891-1897
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Régis, M.1
Borgarino, M.2
Bary, L.3
Llopis, O.4
Graffeuil, J.5
Escotte, L.6
Koenig, U.7
Plana, R.8
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5
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0033280017
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A 0.24 μm SiGe BiCMOS mixed-signal RF production technology featuring a 47 GHz fT HBT and 0.18 μm Leff CMOS
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S.A. St.Onge, D.L. Harame, J.S. Dunn, S. Subbanna, D.C. Ahlgren, G. Freeman, B. Jagannathan, S.J. Jeng, K. Schonenberg, K. Stein, R. Groves, D. Coolbaugh, N. Feilchenfeld, P. Geiss, M. Gordon, P. Gray, D.Hershberger, S. Kilpatrick, R. Johnson, A. Joseph, L. Lanzerotti, J. Malinowski, B. Orner and M. Zierak, "A 0.24 μm SiGe BiCMOS mixed-signal RF production technology featuring a 47 GHz fT HBT and 0.18 μm Leff CMOS," Proc. IEEE Bipolar/BiCMOS Circuits and Tech. Meeting, pp. 117-120, 1999.
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(1999)
Proc. IEEE Bipolar/BiCMOS Circuits and Tech. Meeting
, pp. 117-120
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St.Onge, S.A.1
Harame, D.L.2
Dunn, J.S.3
Subbanna, S.4
Ahlgren, D.C.5
Freeman, G.6
Jagannathan, B.7
Jeng, S.J.8
Schonenberg, K.9
Stein, K.10
Groves, R.11
Coolbaugh, D.12
Feilchenfeld, N.13
Geiss, P.14
Gordon, M.15
Gray, P.16
Hershberger, D.17
Kilpatrick, S.18
Johnson, R.19
Joseph, A.20
Lanzerotti, L.21
Malinowski, J.22
Orner, B.23
Zierak, M.24
more..
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6
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0035173259
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A 0.18 μm BiCMOS technology featuring 120/100 GHz (fT/fmax) HBT and ASIC-compatible CMOS using copper interconnect
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A. Joseph, D. Coolbaugh, M. Zierak, R. Wuthrich, P. Geiss, Z. He, X. Liu, B. Orner, J. Johnson, G. Freeman, D. Ahlgren, B. Jagannathan, L. Lanzerotti, V. Ramachandran, J. Malinowski, H. Chen, J. Chu, M. Gordon, P. Gray, R. Johnson, J. Dunn, S. Subbanna, K. Schonenberg, D. Harame, R. Groves, K. Watson, D. Jadus, M. Meghelli and A. Rylyakov, "A 0.18 μm BiCMOS technology featuring 120/100 GHz (fT/fmax) HBT and ASIC-compatible CMOS using copper interconnect," Proc. IEEE Bipolar/BiCMOS Circuits and Tech. Meeting, pp. 143-146, 2001.
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(2001)
Proc. IEEE Bipolar/BiCMOS Circuits and Tech. Meeting
, pp. 143-146
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Joseph, A.1
Coolbaugh, D.2
Zierak, M.3
Wuthrich, R.4
Geiss, P.5
He, Z.6
Liu, X.7
Orner, B.8
Johnson, J.9
Freeman, G.10
Ahlgren, D.11
Jagannathan, B.12
Lanzerotti, L.13
Ramachandran, V.14
Malinowski, J.15
Chen, H.16
Chu, J.17
Gordon, M.18
Gray, P.19
Johnson, R.20
Dunn, J.21
Subbanna, S.22
Schonenberg, K.23
Harame, D.24
Groves, R.25
Watson, K.26
Jadus, D.27
Meghelli, M.28
Rylyakov, A.29
more..
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7
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0036575795
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Self-aligned SiGe NPN transistors with 285 GHz fMAX and 207 GHz fT in a manufacturable technology
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B. Jagannathan, M. Khater, F. Pagette, J.-S. Rieh, D. Angell, H. Chen, J. Florkey, F. Golan, D. R. Greenberg, R. Groves, S. J. Jeng, J. Johnson, E. Mengistu, K. T. Schonenberg, C. M. Schnabel, P. Smith, A. Stricker, D. Ahlgren, G. Freeman, K. Stein and S. Subbanna, "Self-aligned SiGe NPN transistors with 285 GHz fMAX and 207 GHz fT in a manufacturable technology," IEEE Electron Device Lett., vol. 23, no.5, 2002.
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IEEE Electron Device Lett.
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Jagannathan, B.1
Khater, M.2
Pagette, F.3
Rieh, J.-S.4
Angell, D.5
Chen, H.6
Florkey, J.7
Golan, F.8
Greenberg, D.R.9
Groves, R.10
Jeng, S.J.11
Johnson, J.12
Mengistu, E.13
Schonenberg, K.T.14
Schnabel, C.M.15
Smith, P.16
Stricker, A.17
Ahlgren, D.18
Freeman, G.19
Stein, K.20
Subbanna, S.21
more..
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8
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84942334700
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A single threshold double recessed pHEMT process for economical fabrication of high performance power amplifiers and low noise amplifiers at X-Band
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K. Alavi, B. Rizzi, D. Miller, S. Ogut, A. Bertrand, K. Kessler, F. Fay, C. Laighton and A. Bielunis, "A single threshold double recessed pHEMT process for economical fabrication of high performance power amplifiers and low noise amplifiers at X-Band," Dig. GaAs MANTECH Int. Conf. on Compound Semiconductor Manufacturing, 2001.
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Dig. GaAs MANTECH Int. Conf. on Compound Semiconductor Manufacturing, 2001
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Alavi, K.1
Rizzi, B.2
Miller, D.3
Ogut, S.4
Bertrand, A.5
Kessler, K.6
Fay, F.7
Laighton, C.8
Bielunis, A.9
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9
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0033366187
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Low noise metamorphic HEMT devices and amplifiers on GaAs substrates
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P. F. Marsh, S. L. G. Chu, S. M. Lardizabal, R. E. Leoni III, S. Kang, R. Wohlert, A. M. Bowlby, W. E. Hoke, R. A. McTaggart, C. S. Whelan, P. J. Lemonias, P. M. McIntosh and T. E. Kazior, "Low noise metamorphic HEMT devices and amplifiers on GaAs substrates," Dig. IEEE MTT-S Int. Microwave Symp., pp. 105-108, 1999.
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, pp. 105-108
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Marsh, P.F.1
Chu, S.L.G.2
Lardizabal, S.M.3
Leoni, R.E.4
Kang, S.5
Wohlert, R.6
Bowlby, A.M.7
Hoke, W.E.8
McTaggart, R.A.9
Whelan, C.S.10
Lemonias, P.J.11
McIntosh, P.M.12
Kazior, T.E.13
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10
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0012301116
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Low noise PHEMT and its MMIC LNA implementation for C-band applications
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B. G. Choi, Y. S. Lee, K. S. Yoon, H. C. Seo and C. S. Park, "Low noise PHEMT and its MMIC LNA implementation for C-band applications," Proc. 2nd Int. Conf. on Microwave and Millimeter Wave Tech., pp. 56-59, 2000.
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Choi, B.G.1
Lee, Y.S.2
Yoon, K.S.3
Seo, H.C.4
Park, C.S.5
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11
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0033079811
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Extremely low-noise performance of GaAs MESFET's with wide-head T-shaped gate
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K. Onodera, K. Nishimura, S. Aoyama, S. Sugitani, Y. Yamane and M. Hirano, "Extremely low-noise performance of GaAs MESFET's with wide-head T-shaped gate," IEEE Trans. on Electron Dev., vol. 46 no. 2, pp. 310-319, 1999.
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Onodera, K.1
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Aoyama, S.3
Sugitani, S.4
Yamane, Y.5
Hirano, M.6
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12
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0032654957
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Direct ion-implanted 0.12- m GaAs MESFET with fT of 121 GHz and fMAX of 160 GHz
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H. Hsia, Z. Tang, D. Caruth, D. Becher and M. Feng, "Direct ion-implanted 0.12- m GaAs MESFET with fT of 121 GHz and fMAX of 160 GHz," IEEE Electron Dev.Lett., vol. 20 no. 5, pp. 245-247, 1999.
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, vol.20
, Issue.5
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Hsia, H.1
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13
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84942334701
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Data sheet, Agilent Technologies: Part #ATF-35143
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Data sheet, Agilent Technologies: Part #ATF-35143.
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14
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84942334702
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Data sheets, Filtronic: Parts #LP7512, LP7612, LPD200, LPS200
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Data sheets, Filtronic: Parts #LP7512, LP7612, LPD200, LPS200.
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15
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84942334703
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Data sheet, TriQuint Semiconductor, Part #TGF4350
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Data sheet, TriQuint Semiconductor, Part #TGF4350.
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