Random-dopant-induced variability in nano-CMOS devices and digital circuits

IEEE Transactions on Electron Devices

Volumn 56, Issue 8, 2009, Pages 1588-1597

  Li, Yiming ^a,b   Hwang, Chih Hong ^a   Li, Tien Yeh ^a  

^a NATIONAL CHIAO TUNG UNIVERSITY   (Taiwan)

^b NATIONAL NANO DEVICE LABORATORIES   (Taiwan)

Author keywords

Characteristic fluctuation; Modeling and simulation; Nanoscale digital IC; Random dopant effect; Timing

Indexed keywords

CHARACTERISTIC FLUCTUATION; MODELING AND SIMULATION; NANOSCALE DIGITAL IC; RANDOM-DOPANT EFFECT; TIMING;

CIRCUIT SIMULATION; DIGITAL DEVICES; DIGITAL INTEGRATED CIRCUITS; DOPING (ADDITIVES); INTEGRATED CIRCUITS; NANOSTRUCTURED MATERIALS; TIME MEASUREMENT; TIMING CIRCUITS;

COUPLED CIRCUITS;

EID: 68349141652     PISSN: 00189383     EISSN: None     Source Type: Journal    
DOI: 10.1109/TED.2009.2022692     Document Type: Article

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