-
1
-
-
0023534804
-
Heterojunction bipolar transistors for microwave and millimeter-wave integrated circuits
-
Dec.
-
P. M. Asbeck et al., "Heterojunction bipolar transistors for microwave and millimeter-wave integrated circuits," IEEE Trans. Electron Devices, vol. ED-34, pp. 2571-2579, Dec. 1987.
-
(1987)
IEEE Trans. Electron Devices
, vol.ED-34
, pp. 2571-2579
-
-
Asbeck, P.M.1
-
2
-
-
0031247863
-
max AlGaAs/GaAs HBT with L-shaped base electrode and its application to 50 GHz amplifier
-
max AlGaAs/GaAs HBT with L-shaped base electrode and its application to 50 GHz amplifier," Solid State Electron., vol. 41, pp. 1615-1620, 1997.
-
(1997)
Solid State Electron.
, vol.41
, pp. 1615-1620
-
-
Yanagihara, M.1
-
3
-
-
0032050344
-
High reliability InGaP/GaAs HBT
-
Apr.
-
N. Pan et al., "High reliability InGaP/GaAs HBT," IEEE Trans. Electron Devices, vol. 19, pp. 115-117, Apr. 1998.
-
(1998)
IEEE Trans. Electron Devices
, vol.19
, pp. 115-117
-
-
Pan, N.1
-
4
-
-
0141962843
-
Structural optimization of InGaP/GaAs HBT for power amplifier applications
-
Y. S. Lee and C. S. Park, "Structural optimization of InGaP/GaAs HBT for power amplifier applications," in Proc. IEEE RAWCON, 2001, pp. 249-252.
-
Proc. IEEE RAWCON, 2001
, pp. 249-252
-
-
Lee, Y.S.1
Park, C.S.2
-
5
-
-
0035506611
-
High-speed small-scale InGaP/GaAs HBT technology and its application to integrated circuits
-
Nov.
-
T. Oka et al., "High-speed small-scale InGaP/GaAs HBT technology and its application to integrated circuits," IEEE Trans. Electron Devices, vol. 48, pp. 2625-2630, Nov. 2001.
-
(2001)
IEEE Trans. Electron Devices
, vol.48
, pp. 2625-2630
-
-
Oka, T.1
-
7
-
-
0031185433
-
Harmonic and two-tone intermodulation distortion analyses of the inverted InGa/InAlAs/InP HBT
-
July
-
B. Li and S. Prasad, "Harmonic and two-tone intermodulation distortion analyses of the inverted InGa/InAlAs/InP HBT," IEEE Trans. Microwave Theory Tech., vol. 45, pp. 1135-1137, July 1997.
-
(1997)
IEEE Trans. Microwave Theory Tech.
, vol.45
, pp. 1135-1137
-
-
Li, B.1
Prasad, S.2
-
8
-
-
0033640232
-
Physics-based simulation of nonlinear distortion in semiconductor devices using the harmonic balance method
-
B. Troyanovsky et al., "Physics-based simulation of nonlinear distortion in semiconductor devices using the harmonic balance method," Comput. Methods Appl. Mech. Eng., vol. 181, pp. 467-482, 2000.
-
(2000)
Comput. Methods Appl. Mech. Eng.
, vol.181
, pp. 467-482
-
-
Troyanovsky, B.1
-
10
-
-
0026837678
-
Intermodulation in heterojunction bipolar transistors
-
Mar.
-
S. A. Mass et al., "Intermodulation in heterojunction bipolar transistors," IEEE Trans. Microwave Theory Tech., vol. 40, pp. 442-448, Mar. 1992.
-
(1992)
IEEE Trans. Microwave Theory Tech.
, vol.40
, pp. 442-448
-
-
Mass, S.A.1
-
11
-
-
0001092463
-
Mechanisms determining third order intermodulation distortion in AlGaAs/GaAs heterojunction bipolar transistors
-
Dec.
-
A. Samelis and D. Pavlidis, "Mechanisms determining third order intermodulation distortion in AlGaAs/GaAs heterojunction bipolar transistors," IEEE Trans. Microwave Theory Tech., vol. 40, pp. 2374-2380, Dec. 1992.
-
(1992)
IEEE Trans. Microwave Theory Tech.
, vol.40
, pp. 2374-2380
-
-
Samelis, A.1
Pavlidis, D.2
-
12
-
-
0031375058
-
Intermodulation mechanism and linearization of AlGaAs/GaAs HBT's
-
Dec.
-
J. Lee et al., "Intermodulation mechanism and linearization of AlGaAs/GaAs HBT's," IEEE Trans. Microwave Theory Tech., vol. 45, pp. 2065-2072, Dec. 1997.
-
(1997)
IEEE Trans. Microwave Theory Tech.
, vol.45
, pp. 2065-2072
-
-
Lee, J.1
-
13
-
-
0032164936
-
Intermodulation analysis of the collector-up InGaAs/InAlAs/InP HBT using Volterra series
-
Sept.
-
B. Li and S. Prasad, "Intermodulation analysis of the collector-up InGaAs/InAlAs/InP HBT using Volterra series," IEEE Trans. Microwave Theory Tech., vol. 46, pp. 1321-1323, Sept. 1998.
-
(1998)
IEEE Trans. Microwave Theory Tech.
, vol.46
, pp. 1321-1323
-
-
Li, B.1
Prasad, S.2
-
14
-
-
0034429384
-
Linearity characteristics of GaAs HBT's and the influence of collector design
-
Dec.
-
M. Iwamoto et al., "Linearity characteristics of GaAs HBT's and the influence of collector design," IEEE Trans. Microwave Theory Tech., vol. 48, pp. 2377-2388, Dec. 2000.
-
(2000)
IEEE Trans. Microwave Theory Tech.
, vol.48
, pp. 2377-2388
-
-
Iwamoto, M.1
-
15
-
-
0034875231
-
Systematic analysis of RF distortion in SiGe HBT's
-
G. Niu et al., "Systematic analysis of RF distortion in SiGe HBT's," in IEEE RFIC Symp. Dig., 2001, pp. 147-150.
-
IEEE RFIC Symp. Dig., 2001
, pp. 147-150
-
-
Niu, G.1
-
16
-
-
0035165687
-
Asymetry in intermodulation distortion of HBT power amplifiers
-
Y. Wang et al., "Asymetry in intermodulation distortion of HBT power amplifiers," in IEEE GaAs IC Symp. Tech. Dig., 2001, pp. 201-204.
-
IEEE GaAs IC Symp. Tech. Dig., 2001
, pp. 201-204
-
-
Wang, Y.1
-
17
-
-
0020781156
-
The waveform relaxation method for time-domain analysis of large scale integrated circuits
-
July
-
E. Lalerasmee et al., "The waveform relaxation method for time-domain analysis of large scale integrated circuits," IEEE Trans. Computer-Aided Design, vol. CAD-1, pp. 131-145, July 1982.
-
(1982)
IEEE Trans. Computer-Aided Design
, vol.CAD-1
, pp. 131-145
-
-
Lalerasmee, E.1
-
18
-
-
0012784654
-
A monotone iterative method for bipolar junction transistor circuit simulation
-
Oct.
-
Y. Li, "A monotone iterative method for bipolar junction transistor circuit simulation," WSEAS Trans. Math., vol. 1, pp. 159-164, Oct. 2002.
-
(2002)
WSEAS Trans. Math.
, vol.1
, pp. 159-164
-
-
Li, Y.1
-
19
-
-
0035893071
-
A new parallel adaptive finite volume method for the numerical simulation of semiconductor devices
-
Dec.
-
____, "A new parallel adaptive finite volume method for the numerical simulation of semiconductor devices," Comput. Phys. Commun., vol. 142, pp. 285-289, Dec. 2001.
-
(2001)
Comput. Phys. Commun.
, vol.142
, pp. 285-289
-
-
Li, Y.1
-
20
-
-
0036361047
-
A practical implementation of parallel dynamic load balancing for adaptive computing in VLSI device simulation
-
Aug.
-
____, "A practical implementation of parallel dynamic load balancing for adaptive computing in VLSI device simulation," Eng. Comput., vol. 18, pp. 124-137, Aug. 2002.
-
(2002)
Eng. Comput.
, vol.18
, pp. 124-137
-
-
Li, Y.1
-
21
-
-
0002373790
-
A monotone iterative method for semiconductor device drift diffusion equations
-
Jan.
-
____, "A monotone iterative method for semiconductor device drift diffusion equations," WSEAS Trans. Syst., vol. 1, pp. 68-73, Jan. 2002.
-
(2002)
WSEAS Trans. Syst.
, vol.1
, pp. 68-73
-
-
Li, Y.1
-
24
-
-
0031642577
-
W-band on-wafer load-pull measurement system and its application to HEMT characterization
-
E. Alekseev, D. Pavlidis, and C. Tsironis, "W-band on-wafer load-pull measurement system and its application to HEMT characterization," in IEEE MTT-S Int. Microwave Symp. Dig., 1998, pp. 1479-1482.
-
IEEE MTT-S Int. Microwave Symp. Dig., 1998
, pp. 1479-1482
-
-
Alekseev, E.1
Pavlidis, D.2
Tsironis, C.3
-
25
-
-
0034828284
-
Over GHz low-power RF clock distribution for a multiprocessor digital system
-
W. Ryu et al., "Over GHz low-power RF clock distribution for a multiprocessor digital system," in Proc. IEEE Electronic Components Technology Conf., 2001, pp. 133-140.
-
Proc. IEEE Electronic Components Technology Conf., 2001
, pp. 133-140
-
-
Ryu, W.1
-
27
-
-
0034441463
-
A universal method for calculating and extracting the LF and RF noise behavior of nonlinear devices
-
R. Follmann et al., "A universal method for calculating and extracting the LF and RF noise behavior of nonlinear devices," in Proc. 22nd IEEE Annu. GaAs IC Symp., 2000, pp. 47-51.
-
Proc. 22nd IEEE Annu. GaAs IC Symp., 2000
, pp. 47-51
-
-
Follmann, R.1
|