-
1
-
-
0042912833
-
Simulation of intrinsic parameter fluctuations in decananometer and nanometer-scale MOSFETs
-
Asenov, A., Brown, A.R., Davies, J.H., Kaya, S., Slavcheva, G.: Simulation of intrinsic parameter fluctuations in decananometer and nanometer-scale MOSFETs. IEEE Trans. Electron Devices 50, 1837 (2003)
-
(2003)
IEEE Trans. Electron Devices
, vol.50
, pp. 1837
-
-
Asenov, A.1
Brown, A.R.2
Davies, J.H.3
Kaya, S.4
Slavcheva, G.5
-
2
-
-
33947265310
-
Simulation study of individual and combined sources of intrinsic parameter fluctuations in conventional nano-MOSFETs
-
Roy, G., Brown, A.R., Adamu-Lema, F., Roy, S., Asenov, A.: Simulation study of individual and combined sources of intrinsic parameter fluctuations in conventional nano-MOSFETs. IEEE Trans. Electron Devices 53(12), 3063-3070 (2006)
-
(2006)
IEEE Trans. Electron Devices
, vol.53
, Issue.12
, pp. 3063-3070
-
-
Roy, G.1
Brown, A.R.2
Adamu-Lema, F.3
Roy, S.4
Asenov, A.5
-
3
-
-
50949085545
-
Comparative analysis of conventional and statistical design techniques
-
Burns, S., Bowman, K., Menezes, N., Ketkar, M., De, V., Tschanz, J.: Comparative analysis of conventional and statistical design techniques. In: Int. Workshop on Timing Issues in the Specification and Synthesis of Digital Systems, p. 31 (2007)
-
(2007)
In: Int. Workshop on Timing Issues in the Specification and Synthesis of Digital Systems
, pp. 31
-
-
Burns, S.1
Bowman, K.2
Menezes, N.3
Ketkar, M.4
De, V.5
Tschanz, J.6
-
4
-
-
46149102490
-
System-level process-driven variability analysis for single and multiple voltage-frequency island systems
-
Marculescu, D., Garg, S.: System-level process-driven variability analysis for single and multiple voltage-frequency island systems. In: Proc. IEEE/ACM Intl. Conference on Computer-Aided Design (ICCAD), p. 541 (2006)
-
(2006)
Proc. IEEE/ACM Intl. Conference on Computer-Aided Design (ICCAD)
, pp. 541
-
-
Marculescu, D.1
Garg, S.2
-
5
-
-
0033312006
-
Hierarchical approach to 'atomistic' 3D MOSFET simulation
-
Asenov, A., Brown, A.R., Davies, J.H., Saini, S.: Hierarchical approach to 'atomistic' 3D MOSFET simulation. IEEE Trans. Comput.-Aided Des. Integr. Circuits Syst. 18, 1558 (1999)
-
(1999)
IEEE Trans. Comput.-Aided Des. Integr. Circuits Syst.
, vol.18
, pp. 1558
-
-
Asenov, A.1
Brown, A.R.2
Davies, J.H.3
Saini, S.4
-
6
-
-
3242675991
-
Bipolar quantum corrections in resolving individual dopants in 'atomistic' device simulation
-
Roy, G., Brown, A.R., Asenov, A., Roy, S.: Bipolar quantum corrections in resolving individual dopants in 'atomistic' device simulation. Superlattices Microstruct. 34, 327-334 (2003)
-
(2003)
Superlattices Microstruct.
, vol.34
, pp. 327-334
-
-
Roy, G.1
Brown, A.R.2
Asenov, A.3
Roy, S.4
-
7
-
-
14844337078
-
Impact of intrinsic parameter fluctuations in decanano MOSFETs on yield and functionality of SRAM cells
-
Cheng, B., Roy, S., Roy, G., Adamu-Lema, F., Asenov, A.: Impact of intrinsic parameter fluctuations in decanano MOSFETs on yield and functionality of SRAM cells. Solid-State Electron. 49, 740-746 (2005)
-
(2005)
Solid-State Electron.
, vol.49
, pp. 740-746
-
-
Cheng, B.1
Roy, S.2
Roy, G.3
Adamu-Lema, F.4
Asenov, A.5
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