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Volumn 7, Issue 3, 2008, Pages 115-118

Capacitance fluctuations in bulk MOSFETs due to random discrete dopants

Author keywords

Capacitance; Fluctuations; MOSFET; Timing; Variation

Indexed keywords

MOSFET DEVICES; TIMING CIRCUITS; TRANSISTORS;

EID: 50949086027     PISSN: 15698025     EISSN: 15728137     Source Type: Journal    
DOI: 10.1007/s10825-008-0181-y     Document Type: Article
Times cited : (22)

References (7)
  • 1
    • 0042912833 scopus 로고    scopus 로고
    • Simulation of intrinsic parameter fluctuations in decananometer and nanometer-scale MOSFETs
    • Asenov, A., Brown, A.R., Davies, J.H., Kaya, S., Slavcheva, G.: Simulation of intrinsic parameter fluctuations in decananometer and nanometer-scale MOSFETs. IEEE Trans. Electron Devices 50, 1837 (2003)
    • (2003) IEEE Trans. Electron Devices , vol.50 , pp. 1837
    • Asenov, A.1    Brown, A.R.2    Davies, J.H.3    Kaya, S.4    Slavcheva, G.5
  • 2
    • 33947265310 scopus 로고    scopus 로고
    • Simulation study of individual and combined sources of intrinsic parameter fluctuations in conventional nano-MOSFETs
    • Roy, G., Brown, A.R., Adamu-Lema, F., Roy, S., Asenov, A.: Simulation study of individual and combined sources of intrinsic parameter fluctuations in conventional nano-MOSFETs. IEEE Trans. Electron Devices 53(12), 3063-3070 (2006)
    • (2006) IEEE Trans. Electron Devices , vol.53 , Issue.12 , pp. 3063-3070
    • Roy, G.1    Brown, A.R.2    Adamu-Lema, F.3    Roy, S.4    Asenov, A.5
  • 4
    • 46149102490 scopus 로고    scopus 로고
    • System-level process-driven variability analysis for single and multiple voltage-frequency island systems
    • Marculescu, D., Garg, S.: System-level process-driven variability analysis for single and multiple voltage-frequency island systems. In: Proc. IEEE/ACM Intl. Conference on Computer-Aided Design (ICCAD), p. 541 (2006)
    • (2006) Proc. IEEE/ACM Intl. Conference on Computer-Aided Design (ICCAD) , pp. 541
    • Marculescu, D.1    Garg, S.2
  • 6
    • 3242675991 scopus 로고    scopus 로고
    • Bipolar quantum corrections in resolving individual dopants in 'atomistic' device simulation
    • Roy, G., Brown, A.R., Asenov, A., Roy, S.: Bipolar quantum corrections in resolving individual dopants in 'atomistic' device simulation. Superlattices Microstruct. 34, 327-334 (2003)
    • (2003) Superlattices Microstruct. , vol.34 , pp. 327-334
    • Roy, G.1    Brown, A.R.2    Asenov, A.3    Roy, S.4
  • 7
    • 14844337078 scopus 로고    scopus 로고
    • Impact of intrinsic parameter fluctuations in decanano MOSFETs on yield and functionality of SRAM cells
    • Cheng, B., Roy, S., Roy, G., Adamu-Lema, F., Asenov, A.: Impact of intrinsic parameter fluctuations in decanano MOSFETs on yield and functionality of SRAM cells. Solid-State Electron. 49, 740-746 (2005)
    • (2005) Solid-State Electron. , vol.49 , pp. 740-746
    • Cheng, B.1    Roy, S.2    Roy, G.3    Adamu-Lema, F.4    Asenov, A.5


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.