Addition of yttrium into Hf O2 films: Microstructure and electrical properties

Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films

Volumn 27, Issue 3, 2009, Pages 503-514

  Dubourdieu, C ^a   Rauwel, E ^a   Roussel, H ^a   Ducroquet, F ^b   Hollander B ^c   Rossell, M ^d   Van Tendeloo, G ^d   Lhostis, S ^e   Rushworth, S ^f  

^a GRENOBLE INSTITUTE OF TECHNOLOGY   (France)

^b IMEP LAHC   (France)

^c FORSCHUNGSZENTRUM JÜLICH   (Germany)

^d UNIVERSITY OF ANTWERP   (Belgium)

^e STMICROELECTRONICS   (France)

^f SAFC Hitech   (United Kingdom)

Author keywords

[No Author keywords available]

Indexed keywords

COMPOSITIONAL RANGES; CRYSTALLINE STRUCTURES; CUBIC FILMS; CUBIC PHASE; ELECTRICAL PROPERTIES; HIGH-TEMPERATURE ANNEALING; INTERFACIAL-LAYER THICKNESS; LATTICE PARAMETERS; METAL-ORGANIC CHEMICAL VAPOR DEPOSITIONS; POST DEPOSITIONS; RELATIVE PERMITTIVITIES; SOLID-SOLUTION; X- RAY DIFFRACTIONS; X-RAY PHOTOELECTRON SPECTROSCOPIES; YTTRIUM SILICATES;

DIFFRACTION; ELECTRIC PROPERTIES; HAFNIUM; HAFNIUM COMPOUNDS; INFRARED SPECTROSCOPY; METALLORGANIC CHEMICAL VAPOR DEPOSITION; ORGANIC CHEMICALS; OZONE WATER TREATMENT; PHASE INTERFACES; SEMICONDUCTING SILICON COMPOUNDS; SILICATES; SPECTROSCOPIC ANALYSIS; SPECTRUM ANALYSIS; X RAY PHOTOELECTRON SPECTROSCOPY; YTTRIUM;

YTTRIUM ALLOYS;

EID: 65549099332     PISSN: 07342101     EISSN: None     Source Type: Journal    
DOI: 10.1116/1.3106627     Document Type: Article

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