Improving channel carrier mobility and immunity to charge trapping of high-K NMOSFET by using stacked Y2O3/HfO2 gate dielectric

IEEE Electron Device Letters

Volumn 26, Issue 12, 2005, Pages 876-878

  Zhu, Feng ^a   Rhee, Se Jong ^a   Kang, Chang Yong ^a   Choi, Chang Hwan ^a   Akbar, Mohammad S ^a   Krishnan, Siddarth A ^a   Zhang, Manhong ^a   Kim, Hyoung Sub ^a   Lee, Tackwhi ^a   Ok, Injo ^a   Lee, Jack C ^a  

^a The University of Texas at Austin   (United States)

Author keywords

Channel carrier mobility; Charge trapping; Fixed charge; Flatband voltage; HfO2; Leakage current density; MOSFET; Multimetal oxide; Y2O3

Indexed keywords

ANNEALING; CURRENT DENSITY; DIELECTRIC MATERIALS; ELECTRIC POTENTIAL; ELECTRON MOBILITY; ELECTRON TRAPS; GATES (TRANSISTOR); HAFNIUM COMPOUNDS; LEAKAGE CURRENTS; SPUTTER DEPOSITION; TRANSCONDUCTANCE; YTTRIUM COMPOUNDS;

CHANNEL CARRIER MOBILITY; CHARGE TRAPPING; FIXED CHARGE; FLATBAND VOLTAGE; GATE DIELECTRIC; MULTIMETAL OXIDE; POST-DEPOSITION ANNEAL (PDA);

MOSFET DEVICES;

EID: 29244436391     PISSN: 07413106     EISSN: None     Source Type: Journal    
DOI: 10.1109/LED.2005.859637     Document Type: Article

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