Bonding and structure of ultrathin yttrium oxide films for Si field effect transistor gate dielectric applications

Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures

Volumn 21, Issue 4, 2003, Pages 1792-1796

  Ulrich, M D ^a   Rowe, J E ^a   Niu, D ^b,c   Parsons, G N ^b  

^a NORTH CAROLINA STATE UNIVERSITY   (United States)

^b North Carolina State University   (United States)

^c Novellus Systems Inc   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

BINDING ENERGY; CHEMICAL BONDS; FIELD EFFECT TRANSISTORS; INTERFACES (MATERIALS); PLASMA ENHANCED CHEMICAL VAPOR DEPOSITION; SILICATES; SILICON; X RAY PHOTOELECTRON SPECTROSCOPY; YTTRIUM COMPOUNDS;

ULTRATHIN OXIDE FILMS;

ULTRATHIN FILMS;

EID: 0141496279     PISSN: 10711023     EISSN: None     Source Type: Journal    
DOI: 10.1116/1.1593647     Document Type: Conference Paper

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