Effect of nitridation for high-K layers by ALCVD™ in order to decrease the trapping in non volatile memories

ECS Transactions

Volumn 11, Issue 7, 2007, Pages 213-225

  Grampeix, H ^a   Colonna, J P ^a   Molas, G ^a   Bocquet, M ^a   Martin, F ^a   Rochat, N ^a   Martinez, E ^a   Licitra, C ^a   Veyron, T ^a   Papon, A M ^a   Gely, M ^a   Yckache, K ^a  

^a CEA LETI   (France)

Author keywords

[No Author keywords available]

Indexed keywords

ALUMINA; ALUMINUM NITRIDE; ALUMINUM OXIDE; ATOMIC LAYER DEPOSITION; CHARGE TRAPPING; DATA STORAGE EQUIPMENT; FOURIER TRANSFORM INFRARED SPECTROSCOPY; HAFNIUM OXIDES; NITROGEN; PHOTOELECTRON SPECTROSCOPY; SODIUM ALUMINATE;

AFTER HIGH TEMPERATURE; ATTENUATED TOTAL REFLECTION FOURIER TRANSFORM INFRARED SPECTROSCOPY; AUGER ELECTRON SPECTROSCOPIES (AES); CRYSTALLIZATION TEMPERATURE; NITROGEN INCORPORATION; NON-VOLATILE MEMORY; SPECTROSCOPY ELLIPSOMETRIES; SUBSTRATE INTERFACE;

AUGER ELECTRON SPECTROSCOPY;

EID: 45249120019     PISSN: 19385862     EISSN: 19386737     Source Type: Conference Proceeding    
DOI: 10.1149/1.2779085     Document Type: Conference Paper

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