Yttrium- and terbium-based interlayer on SiO2 and HfO2 gate dielectrics for work function modulation of nickel fully silicided gate in nMOSFET

IEEE Electron Device Letters

Volumn 28, Issue 6, 2007, Pages 482-485

  Lim, Andy Eu Jin ^a   Lee, Rinus T P ^a   Wang, Xin Peng ^a   Hwang, Wan Sik ^a   Tung, Chih Hang ^b   Samudra, Ganesh S ^a   Kwong, Dim Lee ^b   Yeo, Yee Chia ^a  

^a NATIONAL UNIVERSITY OF SINGAPORE   (Singapore)

^b INSTITUTE OF MICROELECTRONICS   (Singapore)

Author keywords

Interlayer; Metal gate; Nickel fully silicided (Ni FUSI); Terbium (Tb); Work function modulation; Yttrium (Y)

Indexed keywords

GATE DIELECTRICS; MOS DEVICES; TERBIUM; WORK FUNCTION; YTTRIUM;

NICKEL FULLY SILICIDED GATE; WORK FUNCTION MODULATION;

MOSFET DEVICES;

EID: 34249815186     PISSN: 07413106     EISSN: None     Source Type: Journal    
DOI: 10.1109/LED.2007.896892     Document Type: Article

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