Investigation of the chemical state of ultrathin Hf-Al-O films during high temperature annealing

Surface Science

Volumn 554, Issue 1, 2004, Pages

  Cho, M H ^a   Chang, H S ^a   Cho, Y J ^a   Moon, D W ^a   Min, K H ^b   Sinclair, R ^b   Kang, S K ^c   Ko, D H ^c   Lee, J H ^d   Gu, J H ^d   Lee, N I ^d  

^a Korea Research Institute of Standards and Science   (South Korea)

^b Stanford University   (United States)

^c Yonsei University   (South Korea)

^d SAMSUNG Electronics   (South Korea)

Author keywords

Photoelectron spectroscopy; Semiconductor insulator interfaces

Indexed keywords

ANNEALING; BINDING ENERGY; CHEMICAL BONDS; DEPOSITION; DISSOCIATION; ELECTRIC INSULATORS; FILM GROWTH; HAFNIUM COMPOUNDS; HIGH TEMPERATURE EFFECTS; SEMICONDUCTOR MATERIALS; SILICATES; THERMODYNAMIC STABILITY; X RAY PHOTOELECTRON SPECTROSCOPY;

ATOMIC LAYER DEPOSITION (ALD); SEMICONDUCTOR-INSULATOR INTERFACES;

ULTRATHIN FILMS;

EID: 12144289927     PISSN: 00396028     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.susc.2004.01.058     Document Type: Article

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