Metal-insulator-metal capacitors using Y2O3 dielectric grown by pulsed-injection plasma enhanced metalorganic chemical vapor deposition

Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films

Volumn 22, Issue 3, 2004, Pages 655-660

  Durand, C ^a   Vallee C ^a   Loup, V ^a   Salicio, O ^a   Dubourdieu, C ^b   Blonkowski, S ^c   Bonvalot, M ^a   Holliger, P ^d   Joubert, O ^a  

^a Université Joseph Fourier   (France)

^b Grenoble INP Phelma   (France)

^c STMICROELECTRONICS   (France)

^d CEA LETI   (France)

Author keywords

[No Author keywords available]

Indexed keywords

ANNEALING; CAPACITORS; ELECTRIC BREAKDOWN; ELECTRIC LOSSES; FILM GROWTH; INTEGRATED CIRCUITS; LEAKAGE CURRENTS; METALLORGANIC CHEMICAL VAPOR DEPOSITION; MICROSTRUCTURE; MIM DEVICES; PERMITTIVITY; PLASMA ENHANCED CHEMICAL VAPOR DEPOSITION; SECONDARY ION MASS SPECTROMETRY; X RAY DIFFRACTION ANALYSIS; X RAY PHOTOELECTRON SPECTROSCOPY;

DIELECTRIC THICKNESS; LEAKAGE CURRENT DENSITY; METAL-INSULATOR-METAL CAPACITORS; ORGANIC RESIDUE CONTAMINATION;

DIELECTRIC FILMS;

EID: 3142622979     PISSN: 07342101     EISSN: None     Source Type: Journal    
DOI: 10.1116/1.1722633     Document Type: Article

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