The effect of an yttrium interlayer on a Ni germanided metal gate workfunction in SiO2/HfO2

IEEE Electron Device Letters

Volumn 28, Issue 12, 2007, Pages 1098-1101

  Yu, H P ^a   Pey, K L ^a,b   Choi, W K ^a,c   Dawood, M K ^c   Chew, H G ^a   Antoniadis, D A ^a,d   Fitzgerald, E A ^a,d   Chi, D Z ^e  

^a SINGAPORE MIT ALLIANCE   (Singapore)

^b NANYANG TECHNOLOGICAL UNIVERSITY   (Singapore)

^c NATIONAL UNIVERSITY OF SINGAPORE   (Singapore)

^d MASSACHUSETTS INSTITUTE OF TECHNOLOGY   (United States)

^e INSTITUTE OF MATERIALS RESEARCH AND ENGINEERING   (Singapore)

Author keywords

High ; Metal gate; Metal gates; Ni germanide (NiGe); Nickel; Workfunction tuning

Indexed keywords

CHEMICAL POTENTIAL; NICKEL COMPOUNDS; WORK FUNCTION; YTTRIUM;

GATE ELECTRODE/GATE INSULATOR; METAL GATES; WORKFUNCTION TUNING;

MIM DEVICES;

EID: 36549046515     PISSN: 07413106     EISSN: None     Source Type: Journal    
DOI: 10.1109/LED.2007.909999     Document Type: Article

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