Chemical structure of the interface in ultrathin HfO2/Si films

Applied Physics Letters

Volumn 84, Issue 8, 2004, Pages 1305-1307

  Lee, Jong Cheol ^a,d   Oh, S J ^a   Cho, Moonju ^b   Hwang, Cheol Seong ^b   Jung, Ranju ^c  

^a Seoul National University   (South Korea)

^b Seoul National University   (South Korea)

^c Samsung Advanced Institute of Technology (SAIT)   (South Korea)

^d SAMSUNG Electronics   (South Korea)

Author keywords

[No Author keywords available]

Indexed keywords

BINDING ENERGY; ELECTRONIC DENSITY OF STATES; HAFNIUM COMPOUNDS; INTERFACES (MATERIALS); NONDESTRUCTIVE EXAMINATION; OXIDATION; PERMITTIVITY; SEMICONDUCTING SILICON; SYNCHROTRON RADIATION; TRANSMISSION ELECTRON MICROSCOPY; X RAY PHOTOELECTRON SPECTROSCOPY;

DEPTH PROFILE; PHOTOEMISSION SPECTROSCOPY;

ULTRATHIN FILMS;

EID: 1642280303     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1645984     Document Type: Article

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