Thermal stability of the HfO2/SiO2 interface for sub-0.1 μm complementary metal-oxide-semiconductor gate oxide stacks: A valence band and quantitative core-level study by soft x-ray photoelectron spectroscopy

Journal of Applied Physics

Volumn 96, Issue 11, 2004, Pages 6362-6369

  Barrett, N ^a   Renault, O ^b   Damlencourt, J F ^b   Martin, F ^b  

^a CEA SACLAY   (France)

^b CEA LETI   (France)

Author keywords

[No Author keywords available]

Indexed keywords

ANNEALING; INTERFACES (MATERIALS); MOS DEVICES; SILICA; SYNCHROTRON RADIATION; THERMODYNAMIC STABILITY; ULTRAHIGH VACUUM; X RAY PHOTOELECTRON SPECTROSCOPY;

ATOMIC LAYER DEPOSITION; CMOS TECHNOLOGY; CORE LEVEL STUDY; VALENCE BAND;

HAFNIUM COMPOUNDS;

EID: 17944375332     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1809769     Document Type: Article

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