Interface formation during the yttrium oxide deposition on Si by pulsed liquid-injection plasma enhanced metal-organic chemical vapor deposition

Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films

Volumn 22, Issue 6, 2004, Pages 2490-2499

  Durand, C ^a   Vallee C ^a   Dubourdieu, C ^b   Gautier, E ^c   Bonvalot, M ^a   Joubert, O ^a  

^a Joseph Fourier University   (France)

^b Grenoble INP Phelma   (France)

^c INSTITUT DES MATÉRIAUX JEAN ROUXEL   (France)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRON ENERGY LOSS SPECTROSCOPY; INTERFACES (MATERIALS); METALLORGANIC CHEMICAL VAPOR DEPOSITION; PARTICLE BEAM INJECTION; PLASMA ENHANCED CHEMICAL VAPOR DEPOSITION; SILICA; SILICATES; THICKNESS CONTROL; TRANSMISSION ELECTRON MICROSCOPY; X RAY PHOTOELECTRON SPECTROSCOPY;

ANGLE-RESOLVED X-RAY PHOTOELECTRON SPECTROSCOPY (XPS); PLASMA ENHANCED METAL-ORGANIC CHEMICAL VAPOR DEPOSITION (PE-MOCVD); YTTRIUM OXIDE DEPOSITION; YTTRIUM SILICATE;

YTTRIUM COMPOUNDS;

EID: 10244263532     PISSN: 07342101     EISSN: None     Source Type: Journal    
DOI: 10.1116/1.1810163     Document Type: Article

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