Crystalline structure of HfZrO thin films and ZrO2 / HfO 2 bi-Layers grown by AVD for MOS applications

ECS Transactions

Volumn 13, Issue 1, 2008, Pages 101-109

  Lhostis, S ^a   Gaumer, C ^a   Bonafos, C ^b   Schamm, S ^b   Cherkashin, N ^b   Pierre, F ^c   Fanton, A ^c   Morin, C ^a   Ferrieu, F ^a   Casse, M ^c   Garros, X ^c   Leroux, C ^c  

^a STMICROELECTRONICS   (France)

^b CEMES CNRS   (France)

^c CEA LETI   (France)

Author keywords

[No Author keywords available]

Indexed keywords

ATOMIC VAPOR DEPOSITIONS; BI-LAYERS; CMOS TRANSISTORS; CRYSTALLINE STRUCTURES; CRYSTALLINITY; DEPOSITED LAYERS; DIELECTRIC CONSTANTS; ELECTRICAL PERFORMANCES; ELECTROCHEMICAL SOCIETIES; GATE OXIDES; MORPHOLOGICAL PROPERTIES; NEW MATERIALS;

CONCENTRATION (PROCESS); HAFNIUM; HAFNIUM COMPOUNDS; LOGIC GATES; SEMICONDUCTING SILICON COMPOUNDS; SILICON; THICK FILMS; VAPOR DEPOSITION; ZIRCONIUM; ZIRCONIUM ALLOYS;

DIELECTRIC MATERIALS;

EID: 55649102261     PISSN: 19385862     EISSN: 19386737     Source Type: Conference Proceeding    
DOI: 10.1149/1.2911489     Document Type: Conference Paper

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