Mechanism of improved channel carrier mobility for stacked Y 2O3/HfO2 gate dielectric

Applied Physics Letters

Volumn 89, Issue 17, 2006, Pages

  Zhu, Feng ^a   Kang, Chang Yong ^a   Rhee, Se Jong ^a   Choi, Chang Hwan ^a   Krishnan, Siddarth A ^a   Zhang, Manhong ^a   Kim, Hyoung Sub ^a   Lee, Taekhwi ^a   Ok, Injo ^a   Thareja, Gaurav ^a   Lee, Jack C ^a  

^a The University of Texas at Austin   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CARRIER MOBILITY; DIELECTRIC MATERIALS; PHONONS; POLARIZATION; SCATTERING; TEMPERATURE DISTRIBUTION; YTTRIUM COMPOUNDS;

ELECTRON CHANNEL; GATE DIELECTRIC; IONIC POLARIZATION; PHONON SCATTERING;

GATES (TRANSISTOR);

EID: 33750524211     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.2363141     Document Type: Article

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