Gaussian distribution of inhomogeneous barrier height in tungsten/4H-SiC (000-1) Schottky diodes

Microelectronic Engineering

Volumn 86, Issue 3, 2009, Pages 303-309

  Toumi, S ^a   Ferhat Hamida, A ^a   Boussouar, L ^a   Sellai, A ^b   Ouennoughi, Z ^a   Ryssel, H ^c  

^a FERHAT ABBAS UNIVERSITY   (Algeria)

^b SULTAN QABOOS UNIVERSITY   (Oman)

^c UNIVERSITY OF ERLANGEN NUREMBERG   (Germany)

Author keywords

Electrical measurements; Inhomogeneity; Schottky barrier; Silicon carbide; Tungsten

Indexed keywords

CURRENT VOLTAGE CHARACTERISTICS; GAUSSIAN DISTRIBUTION; SILICON CARBIDE; TEMPERATURE DISTRIBUTION; THERMIONIC EMISSION; TUNGSTEN; WIDE BAND GAP SEMICONDUCTORS;

BARRIER INHOMOGENEITIES; ELECTRICAL MEASUREMENT; ELEVATED TEMPERATURE; GAUSSIAN DISTRIBUTION MODEL; INHOMOGENEITIES; METAL SEMICONDUCTOR INTERFACE; SCHOTTKY BARRIERS; TEMPERATURE DEPENDENCE;

SCHOTTKY BARRIER DIODES;

EID: 59349090576     PISSN: 01679317     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.mee.2008.10.015     Document Type: Article

References (64)

1. Waldrop J.R., and Grant R.W. Appl. Phys. Lett. 62 (1993) 2685
2. Syrkin A.L., Andreev A.N., Lebedev A.A., Rastegaeva M.G., and Chelnokov V.E. J. Appl. Phys. 78 (1995) 5511
3. Saxena V., Su J.N., and Steckl A.J. IEEE Trans. Electron Dev. 46 (1999) 456
4. Fröjdh C., Thungström G., Nilsson H.-E., and Petersson C.S. Phys. Scripta T79 (1999) 297
5. Raynaud C., Isoird K., Lazar M., Johnson C.M., and Wright N. J. Appl. Phys. 91 (2002) 9841
6. Aboelfotoh M.O., Fröjdh C., and Petersson C.S. Phys. Rev. B 67 (2003) 075312
7. Roccaforte F., La Via F., Baeri A., Roccaforte F., Raineri V., Calcagno L., and Mangano F. J. Appl. Phys. 96 (2004) 4313
8. Venter A., Samiji M.E., and Leitch A.W.R. Phys. Stat. Sol. (c) 1 (2004) 2264
9. Duman S., Doǧan S., Gürbulak B., and Türüt A. Appl. Phys. A: Mater. Sci. Process. 91 (2008) 337
10. Sefaoǧlu A., Duman S., Doǧan S., Gürbulak B., Tüzemen S., and Türüt A. Microelectron. Eng. 85 (2008) 631
11. Itoh A., and Matsunami H. Phys. Stat. Sol. (a) 162 (1997) 389
12. Yakimova R., Hemmingsson C., Macmillan M.F., Yakimov T., and Janzén E. J. Electron. Mater. 27 (1998) 871
13. Wahab Q., Kimoto T., Ellison A., Hallin C., Tuominen M., Yakimova R., Henry A., Bergman J.P., and Janzén E. Appl. Phys. Lett. 72 (1998) 445
14. Defives D., Noblanc O., Dua C., Brylinski C., Bartula M., Aubry-Fortuna V., and Meyer F. IEEE Trans. Electron Dev. 46 (1999) 449
15. Skromme B.J., Luckowski E., Moore K., Bhatnagar M., Weitzel C.E., Gehoski T., and Ganser D. J. Electron. Mater. 29 (2000) 376
16. Defives D., Durand O., Wyczisk F., Noblanc O., Brylinski C., and Meyer F. Microelectron. Eng. 55 (2001) 369
17. Treu M., Rupp R., Kapels H., and Bartsch W. Mater. Sci. Forum 353-356 (2001) 679
18. Weiss R., Frey L., and Ryssel H. Appl. Surf. Sci. 184 (2001) 413
19. Roccaforte F., La Via F., Raineri V., Pierobon R., and Zanoni E. J. Appl. Phys. 93 (2003) 9137
20. Pérez R., Mestres N., Montserrat J., Tournier D., and Godignon P. Phys. Stat. Sol. (a) 202 (2005) 692
21. Bluet J.M., Ziane D., Guillot G., Tournier D., Brosselard P., Montserrat J., and Godignon P. Superlattices Microstruct. 40 (2006) 399
22. Ma X., Sadagopan P., and Sudarshan T.S. Phys. Stat. Sol. (a) 203 (2006) 643
23. Pirri C.F., Ferrero S., Scaltrito L., Perrone D., Guastella S., Furno M., Richieri G., and Merlin L. Microelectron. Eng. 83 (2006) 86
24. Aydi{dotless}n M.E., Yi{dotless}ldi{dotless}ri{dotless}m N., and Türüt A. J. Appl. Phys. 102 (2007) 043701
25. Ewing D.J., Wahab Q., Ciechonski R.R., Syvajarvi M., Yakimova R., and Porter L.M. Semicond. Sci. Technol. 22 (2007) 1287
26. Buc D., Stuchlikova L., Harmatha L., and Hotovy I. J. Mater. Sci: Mater. Electron. 19 (2008) 783
27. Ferhat Hamida A., Ouennoughi Z., Sellai A., Weiss R., and Ryssel H. Semicond. Sci. Technol. 23 (2008) 045005
28. Casady J.B., and Johnson W. Solid State Electron. 39 (1996) 1409
29. Chow T.P., Khemka V., Fedison J., Ramungul N., Matocha K., Tang Y., and Gutmann R.J. Solid State Electron. 44 (2000) 277
30. Kojima K., Okumura H., Kuroda S., and Arai K. J. Cryst. Growth 269 (2004) 367
31. Danno K., Kimoto T., Asano K., Sugawara Y., and Matsunami H. J. Electron. Mater. 34 (2005) 324
32. Ramaiah K.S., Bhat I., Chow T.P., Kim J.K., Schubert E.F., Johnstone D., and Akarca-Biyikli S. J. Appl. Phys. 98 (2005) 106108
33. Chen W., Lee K.Y., and Capano M.A. J. Cryst. Growth 297 (2006) 265
34. Wada K., Kimoto T., Nishikawa K., and Matsunami H. J. Cryst. Growth 291 (2006) 370
35. Ramaiah K.S., Bhat I., Chow T.P., Kim J.K., Schubert E.F., and Johnstone D. Physica B 391 (2007) 35
36. Shigiltchoff O., Bai S., Devaty R.P., Choyke W.J., Kimoto T., Hobgood D., Neudeck P.G., and Porter L.M. Mater. Sci. Forum 433-436 (2003) 705
37. Reshanov S.A., Pensl G., Danno K., Kimoto T., Hishiki S., Ohshima T., Itoh H., Yan F., Devaty R.P., and Choyke W.J. J. Appl. Phys. 102 (2007) 113702
38. Geib K.M., Wilson C., Long R.G., and Wilmsen C.W. J. Appl. Phys. 68 (1990) 2796
39. Goesmann F., and Schmid-Fetzer R. Mater. Sci. Eng. B 34 (1995) 224
40. Seng W.F., and Barnes P.A. Mater. Sci. Eng. B 72 (2000) 13
41. Sullivan J.P., Tung R.T., Pinto M.R., and Graham W.R. J. Appl. Phys. 70 (1991) 7403
42. Werner J.H., and Güttler H.H. J. Appl. Phys. 69 (1991) 1522
43. Tung R.T. Phys. Rev. B 45 (1992) 13509
44. Im H.-J., Ding Y., Pelz J.P., and Choyke W.J. Phys. Rev. B 64 (2001) 07310
45. Benmaza H., Akkal B., Abid H., Bluet J.M., Anani M., and Bensaad Z. Microelectron. J. 39 (2008) 80
46. Rhoderick E.H., and Williams R.H. Metal-Semiconductor Contacts. second ed. (1988), Clarendon, Oxford
47. Bozack M.J. Phys. Stat. Sol. (b) 2002 (1997) 549
48. Sze S.M. Physics of Semiconductor Devices (1981), Wiley-Interscience
49. Osvald J., and Horvàth Z.J. Appl. Surf. Sci. 234 (2004) 349
50. La Via F., Galvagno G., Roccaforte F., Ruggiero A., and Calcagno L. Appl. Phys. Lett. 87 (2005) 142105
51. Song Y.P., Van Meirhaeghe R.L., Laflère W.H., and Cardon F. Solid State Electron. 29 (1986) 633
52. D.R. Lide, (Ed.), CRC Handbook of Chemistry and Physics, Internet Version 2005, , CRC Press, Boca Raton, FL, 2005.
53. Wiets M., Weinelt M., and Fauster T. Phys. Rev. B 68 (2003) 125321
54. Giannazzo F., Roccaforte F., Raineri V., and Liotta S.F. Europhys. Lett. 74 (2006) 686
55. Schmitsdorf R.F., Kampen T.U., and Mönch W. J. Vac. Sci. Technol. B 15 (1997) 1221
56. Chand S., and Kumar J. J. Appl. Phys. 80 (1996) 288
57. Chand S., and Kumar J. J. Appl. Phys. 82 (1997) 5005
58. Saxena A.N. Surf. Sci. 13 (1969) 151
59. Lundberg N., Ostling M., Tagtstrom P., and Jansson U. J. Electrochem. Soc. 142 (1996) 1662
60. Baud L., Jaussaud C., Madar R., Bernard C., Chen J.S., and Nicolet M.A. Mater. Sci. Eng. B 29 (1995) 126
61. Noblanc O., Arnodo C., Cassette S., Brylinski C., Kakanakova-Georgieva A., Marinova T., Kassamakova L., Kakanakov R., Pécz B., Sulyok A., and Radnoczi G. Mater. Sci. Forum 264-268 (1998) 817
62. Kakanakova-Georgieva A., Marinova T., Noblanc O., Arnodo C., Cassette S., and Brylinski C. Thin Solid Films 337 (1999) 180
63. Kim J., Ren F., Baca A.G., Briggs R.D., and Pearton S.J. Solid State Electron. 47 (2003) 1345
64. Kim J., Ren F., Baca A.G., Chung G.Y., and Pearton S.J. Solid State Electron. 48 (2004) 175