High temperature thermal stability of Au/Ti/WSix Schottky contacts on n-type 4H-SiC

Solid-State Electronics

Volumn 47, Issue 8, 2003, Pages 1345-1350

  Kim, Jihyun ^a   Ren, F ^a   Baca, A G ^b   Briggs, R D ^b   Pearton, S J ^a  

^a University of Florida   (United States)

^b SANDIA NATIONAL LABORATORIES   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ANNEALING; AUGER ELECTRON SPECTROSCOPY; CURRENT VOLTAGE CHARACTERISTICS; ELECTRIC CONTACTS; THERMODYNAMIC STABILITY;

SCHOTTKY CONTACTS;

SILICON CARBIDE;

EID: 0037838946     PISSN: 00381101     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0038-1101(03)00069-8     Document Type: Article

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