Schottky Barriers for Pt, Mo and Ti on 6H and 4H SiC (0001), (0001̄), (11̄00) and (12̄10) Faces Measured by I-V, C-V and Internal Photoemission

Materials Science Forum

Volumn 433-436, Issue , 2003, Pages 705-708

  Shigiltchoff, O ^a   Bai, S ^a   Devaty, R P ^a   Choyke, W J ^a   Kimoto, T ^b   Hobgood, D ^c   Neudeck, P G ^d   Porter, L M ^e  

^a UNIVERSITY OF PITTSBURGH   (United States)

^b KYOTO UNIVERSITY   (Japan)

^c Arkansas Power Electronics International Inc   (United States)

^d NASA GLENN RESEARCH CENTER   (United States)

^e CARNEGIE MELLON UNIVERSITY   (United States)

Author keywords

Breakdown; Current Voltage; Internal Photoemission; Schottky Barrier

Indexed keywords

ATOMIC FORCE MICROSCOPY; CHEMICAL VAPOR DEPOSITION; CONCENTRATION (PROCESS); CRYSTALLOGRAPHY; CURRENT DENSITY; ELECTRIC BREAKDOWN; PHOTOEMISSION; SCHOTTKY BARRIER DIODES; SEMICONDUCTOR DOPING;

DOPING CONCENTRATIONS;

SILICON CARBIDE;

EID: 0242413269     PISSN: 02555476     EISSN: 16629752     Source Type: Book Series    
DOI: 10.4028/www.scientific.net/msf.433-436.705     Document Type: Conference Paper

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