Barrier height homogeneity for 4.5 kV 4H-SiC Schottky diodes

Superlattices and Microstructures

Volumn 40, Issue 4-6 SPEC. ISS., 2006, Pages 399-404

  Bluet, J M ^a   Ziane, D ^a   Guillot, G ^a   Tournier, D ^b   Brosselard, P ^c   Montserrat, J ^c   Godignon, P ^c  

^a INSTITUT DES NANOTECHNOLOGIES DE LYON   (France)

^b Univ Claude Bernard Lyon1   (France)

^c INSTITUTO DE MICROELECTRÓNICA DE BARCELONA   (Spain)

Author keywords

Barrier height; Schottky diode; SiC

Indexed keywords

IONS; MATHEMATICAL MODELS; PARAMETER ESTIMATION; SEMICONDUCTOR MATERIALS; SILICON CARBIDE;

BARRIER HEIGHT; THERMIONIC MODEL; WERNER MODEL;

SCHOTTKY BARRIER DIODES;

EID: 33845253609     PISSN: 07496036     EISSN: 10963677     Source Type: Journal    
DOI: 10.1016/j.spmi.2006.06.012     Document Type: Article

References (7)

1. Rupp R., Treu R., Mauder A., Griebl E., Werner W., Bartsch W., and Stephani D. Mat. Sci. Forum 338-342 (2000) 1167-1170
2. J. Millan, P. Godignon, D. Tournier, 24th-International-Conference-on-Microelectronics-(Nis Serbie-Montnegro), IEEE-Cat.-No.04TH8716, 2004, pp. 417-420
3. Nakamura T., Miyanagi T., Kamata I., Jikimoto T., and Tsuchida H. IEEE EDL 26 2 (2005) 99-101
4. D. Tournier, P. Waind, P. Godignon, J. Millan, R. Bassett, International Conference on SiC and Related Materials, Pittsburgh, USA, September 2005, Materials Science Forum (in press)
5. Werner J., and Güttler H. J. Appl. Phys. 69 3 (1991) 1522-1533
6. Roccaforte F., La Via F., Raineri V., Pierobon R., and Zanoni E. J. Appl. Phys. 93 (2003) 865
7. Sze S.M. Physics of Semiconductor Devices. 2nd edition (1981), Wiley, New York pp. 250-253