Barrier inhomogeneities and electrical characteristics of Ni/Ti bilayer Schottky contacts on 4H-SiC after high temperature treatments

Physica Status Solidi (A) Applications and Materials Science

Volumn 202, Issue 4, 2005, Pages 692-697

  Perez R ^a,b   Mestres, N ^a   Montserrat, J ^b   Tournier, D ^b   Godignon, P ^b  

^a UNIVERSITAT AUTÒNOMA DE BARCELONA   (Spain)

^b CSIC   (Spain)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRICAL CHARACTERISTICS; ELECTRON TRANSPORT; METAL SEMICONDUCTOR INTERFACE; TEMPERATURE TREATMENT;

CURRENT VOLTAGE CHARACTERISTICS; ELECTRON TRANSITIONS; HIGH TEMPERATURE EFFECTS; INTERFACES (MATERIALS); MATHEMATICAL MODELS; SILICON CARBIDE;

SCHOTTKY BARRIER DIODES;

EID: 25444437933     PISSN: 18626300     EISSN: 18626319     Source Type: Journal    
DOI: 10.1002/pssa.200460475     Document Type: Conference Paper

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